中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 2008 [116]
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Growth of c-oriented zno films on (001) smo3 substrates by mocvd 期刊论文  iSwitch采集
Journal of crystal growth, 2008, 卷号: 311, 期号: 1, 页码: 200-204
作者:  
Jia, Caihong;  Chen, Yonghai;  Liu, Genhua;  Liu, Xianglin;  Yang, Shaoyan
收藏  |  浏览/下载:42/0  |  提交时间:2019/05/12
In Situ Epitaxial Growth of Triangular CdS Nanoplates on Mica by Dip-Pen Nanolithography 期刊论文  OAI收割
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 卷号: 112, 期号: 48, 页码: 18938-18942
作者:  
Chu, Haibin;  Ding, Lei;  Wang, Jinyong;  Li, Xuemei;  You, Liping
  |  收藏  |  浏览/下载:14/0  |  提交时间:2019/04/09
MICROSTRUCTURE CHARACTERISTICS AND CRYSTALLOGRAPHIC ORIENTATION OF TRANSIENT LIQUID PHASE JOINT OF Ni-BASED SINGLE CRYSTAL SUPERALLOY 期刊论文  OAI收割
ACTA METALLURGICA SINICA, 2008, 卷号: 44, 期号: 12, 页码: 1474-1478
作者:  
Li Wen;  Jin Tao;  Hu Zhuangqi
  |  收藏  |  浏览/下载:4/0  |  提交时间:2021/02/02
Flip chip light emitting diode devices having thinned or removed substrates 专利  OAI收割
专利号: US7456035, 申请日期: 2008-11-25, 公开日期: 2008-11-25
作者:  
ELIASHEVICH, IVAN;  KOLODIN, BORIS;  STEFANOV, EMIL P.
  |  收藏  |  浏览/下载:6/0  |  提交时间:2019/12/24
Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(111) substrate by pulsed-laser deposition 期刊论文  OAI收割
J. Phys. D-Appl. Phys., 2008, 卷号: 41, 期号: 20
99
收藏  |  浏览/下载:10/0  |  提交时间:2013/04/03
Growth modes, strain states, and electrical transport properties of epitaxial La0.5Sr0.5CoO3 thin films grown on buffered Si substrates 期刊论文  OAI收割
Solid State Commun., 2008, 卷号: 145, 期号: 4, 页码: 178
李效民
收藏  |  浏览/下载:12/0  |  提交时间:2013/04/03
Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) films on different epitaxial bottom electrodes buffered Si substrates 期刊论文  OAI收割
J. Cryst. Growth, 2008, 卷号: 310, 期号: 3, 页码: 575
李效民
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/03
Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element 专利  OAI收割
专利号: US7452789, 申请日期: 2008-11-18, 公开日期: 2008-11-18
作者:  
OKUYAMA, HIROYUKI
  |  收藏  |  浏览/下载:12/0  |  提交时间:2019/12/24
Structural and electrical properties of (110) zno epitaxial thin films on (001) srtio3 substrates 期刊论文  iSwitch采集
Solid state communications, 2008, 卷号: 148, 期号: 5-6, 页码: 247-250
作者:  
Wu, Yunlong;  Zhang, Liuwan;  Xie, Guanlin;  Ni, Jun;  Chen, Yonghai
收藏  |  浏览/下载:27/0  |  提交时间:2019/05/12
Growth parameter dependence of structural characterizations of diluted magnetic semiconductor (ga, cr)as 期刊论文  iSwitch采集
Ieee transactions on magnetics, 2008, 卷号: 44, 期号: 11, 页码: 2692-2695
作者:  
Lu, J.;  Bi, J. F.;  Wang, W. Z.;  Gan, H. D.;  Meng, H. J.
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12