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Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [7]
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Thermal characterization of GaN-based laser diodes by forward-voltage method 期刊论文  OAI收割
journal of applied physics, 2012, 卷号: 111, 期号: 9, 页码: 94513
Feng, MX; Zhang, SM; Jiang, DS; Liu, JP; Wang, H; Zeng, C; Li, ZC; Wang, HB; Wang, F; Yang, H
收藏  |  浏览/下载:13/0  |  提交时间:2013/03/17
Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure 期刊论文  OAI收割
applied physics letters, 2011, 卷号: 99, 期号: 2, 页码: 23502
Cui K; Ma WQ; Zhang YH; Huang JL; Wei Y; Cao YL; Jin Z; Bian LF
收藏  |  浏览/下载:12/0  |  提交时间:2012/02/06
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文  OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:  
Dong Z;  Huang BJ
收藏  |  浏览/下载:49/2  |  提交时间:2011/07/05
Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文  OAI收割
physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 461-463, 461-463
作者:  
Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Sun, Lili;  Liu, Naixin
  |  收藏  |  浏览/下载:44/0  |  提交时间:2012/06/14
The junction temperature and forward voltage relationship of GaN-based laser diode 期刊论文  OAI收割
laser physics, 2009, 卷号: 19, 期号: 3, 页码: 400-402
Liu YT; Cao Q; Song GF; Chen LH
收藏  |  浏览/下载:309/64  |  提交时间:2010/03/08
Electroluminescence from Ge on Si substrate at room temperature 期刊论文  OAI收割
applied physics letters, 2009, 卷号: 95, 期号: 9, 页码: art. no. 092102
作者:  
Su SJ;  Xue CL
收藏  |  浏览/下载:51/1  |  提交时间:2010/03/08
Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文  OAI收割
applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115
Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH
收藏  |  浏览/下载:63/3  |  提交时间:2010/03/08