机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [9]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2009 [1]
• 2008 [2]
• 2006 [1]
• 2003 [1]
• 2001 [2]
• 更多

学科主题

• 半导体物理 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301 作者:  Wang, LG;  Shen, C;  Zheng, HZ;  Zhu, H;  Zhao, JH   |  收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 charged acceptor centre  screening effect  exchange interaction  SHALLOW ACCEPTOR STATES  GALLIUM-ARSENIDE  SEMICONDUCTORS  FIELD  Charged Acceptor Centre  Screening Effect  Exchange Interaction  Shallow Acceptor States  Gallium-arsenide  Semiconductors  Field   Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文  OAI收割 japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206 Lu SL (Lu, Shulong); Nosho H (Nosho, Hidetaka); Tackeuchi A (Tackeuchi, Atsushi); Bian LF (Bian, Lifeng); Dong JR (Dong, Jianrong); Niu ZC (Niu, Zhichuan) 收藏  |  浏览/下载：175/28  |  提交时间：2010/03/08 ALLOYS   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文  OAI收割 japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1 Zhong, L; Ma, XY 收藏  |  浏览/下载：55/0  |  提交时间：2010/03/08 tensile strain  GaAsP/GaInP  photoluminescence  quantum well  laser diodes  LP-MOCVD   Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705 Chi F; Li SS 收藏  |  浏览/下载：93/0  |  提交时间：2010/04/11 AHARONOV-BOHM INTERFEROMETER  SINGLE-ELECTRON TRANSISTOR  COULOMB-BLOCKADE  ANDERSON MODEL  MAGNETIC-FLUX  KONDO REGIME  TRANSPORT  EQUILIBRIUM  DEVICES   Magnetic properties and rectifying behaviour of silicon doped with gadolinium 期刊论文  OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473 Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12 magnetic semiconductor  magnetic p-n junction  ion beam epitaxy  gadolinium silicides  METAL-INSULATOR-TRANSITION  P-N-JUNCTION  INDUCED FERROMAGNETISM  SI/SIER INTERFACE  BEAM EPITAXY  SEMICONDUCTORS  EXCITATION  MAGNETORESISTANCE  ALLOYS   Circular polarization of excitonic luminescence in CdTe quantum wells with excess electrons of different densities 期刊论文  OAI收割 physical review b, 2001, 卷号: 63, 期号: 4, 页码: art.no.045313 作者:  Tan PH 收藏  |  浏览/下载：62/0  |  提交时间：2010/08/12 NEGATIVELY CHARGED EXCITONS  GAS  RESONANCE   Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文  OAI收割 applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511 Sheng SR; Liao XB; Kong GL 收藏  |  浏览/下载：103/17  |  提交时间：2010/08/12 CONSTANT PHOTOCURRENT METHOD  A-SI-H  ABSORPTION  FILMS  SPECTROSCOPY  DEPOSITION  STABILITY  DILUTION   Spin split cyclotron resonance in GaAs quantum wells 会议论文  OAI收割 workshop of the advanced-study-institute on physics and chemistry of nanostructures materials, hong kong, peoples r china, jan, 1999 Wu XG 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 LIMIT   DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS 期刊论文  OAI收割 physical review b, 1991, 卷号: 44, 期号: 24, 页码: 13435-13445 ZHONG XF 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 GALLIUM-ARSENIDE  LOCAL MODE  SPECTROSCOPY