机构

• 半导体研究所 [39]

采集方式

• OAI收割 [39]

内容类型

• 期刊论文 [38]
• 会议论文 [1]

发表日期

• 2012 [1]
• 2011 [5]
• 2010 [1]
• 2008 [5]
• 2007 [3]
• 2006 [6]
• 更多

学科主题

• 半导体材料 [39]

筛选

浏览/检索结果: 共39条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2012, 卷号: 359, 页码: 55-59 Li LG (Li, Li-Gong); Liu SM (Liu, Shu-Man); Luo S (Luo, Shuai); Yang T (Yang, Tao); Wang LJ (Wang, Li-Jun); Liu JQ (Liu, Jun-Qi); Liu FQ (Liu, Feng-Qi); Ye XL (Ye, Xiao-Ling); Xu B (Xu, Bo); Wang ZG (Wang, Zhan-Guo) 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/26 Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: 463 Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG 收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06 RAMAN-SCATTERING  SEMICONDUCTING NANOWIRES  OPTOELECTRONIC DEVICES  PHOSPHIDE NANOWIRES  OPTICAL PHONONS  SILICON  CRYSTALS  SPECTRA   The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42 作者:  Song HP;  Shi K;  Sang L;  Wei HY 收藏  |  浏览/下载：56/3  |  提交时间：2011/07/05 Metal organic chemical vapor deposition  Sapphire  Zinc compounds  Semiconducting II-VI materials  VAPOR-PHASE EPITAXY  OPTICAL-PROPERTIES  ZNO NANORODS  RAMAN-SCATTERING  M-PLANE  FILMS  PHOTOLUMINESCENCE  DEPOSITION  NANOWIRES  FIELDS   The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914 作者:  Jin P;  Ye XL;  Zhou XL 收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05 SPECTROSCOPY   GaN grown with InGaN as a weakly bonded layer 期刊论文  OAI收割 crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585 作者:  Wei HY;  Song HP 收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  SI(001) SUBSTRATE  STRAIN  EPITAXY   Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文  OAI收割 rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251 作者:  Li GK 收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05 vanadium dioxide  infrared transition  diffraction effect  dual ion beam sputtering  annealing   Blue-shift photoluminescence from porous InAlAs 期刊论文  OAI收割 semiconductor science and technology, 2010, 卷号: 25, 期号: 11, 页码: art. no. 115006 Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：51/0  |  提交时间：2010/12/28 MACROPOROUS SILICON  PORE FORMATION  GAP  INP  AL0.48IN0.52AS  NANOSTRUCTURES  MORPHOLOGY   The growth temperatures dependence of optical and electrical properties of InN films 期刊论文  OAI收割 science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242 Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：48/2  |  提交时间：2010/03/08 metalorganic chemical vapor deposition  X-ray diffraction  photoluminescence   Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition 期刊论文  OAI收割 thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928 Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL 收藏  |  浏览/下载：28/3  |  提交时间：2010/03/08 X-ray diffraction  metal-organic chemical vapor deposition  zinc oxide  structural properties   Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713 Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM 收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08 GaN  Si(111)  Crack  AlN  MOCVD