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• 上海微系统与信息技... [19]

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• OAI收割 [19]

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• 期刊论文 [19]

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• 2011 [1]
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浏览/检索结果: 共19条，第1-10条 帮助 限定条件 专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 6 Pages, 页码: 405102 Wang, XD; Hu, WD; Chen, XS; Xu, JT; Wang, L; Li, XY; Lu, W 收藏  |  浏览/下载：10/0  |  提交时间：2012/05/12 Distinction investigation of InGaAs photodetectors cutoff at 2.9 mu m 期刊论文  OAI收割 INFRARED PHYSICS & TECHNOLOGY, 2010, 卷号: 53, 期号: 3, 页码: 173-176 Li, C; Zhang, YG(张永刚）; Wang, K; Gu, Y; Li, HSBY; Li, YY 收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24 VAPOR-PHASE EPITAXY  PHOTODIODES  WAVELENGTH  BUFFER  LAYERS  MOCVD  CAP   Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination 期刊论文  OAI收割 INFRARED PHYSICS & TECHNOLOGY, 2009, 卷号: 52, 期号: 1, 页码: 52-56 Zhang, YG(张永刚）; Gu, Y; Tian, ZB; Li, AZ; Zhu, XR; Wang, K 收藏  |  浏览/下载：18/0  |  提交时间：2012/03/24 VAPOR-PHASE EPITAXY  DARK CURRENT  INGAAS PHOTODETECTORS  INFRARED DETECTORS  PHOTODIODES  EFFICIENCY  BUFFER  MOCVD   IMPROVING THE PERFORMANCE OF EXTENDED WAVELENGTH InGaAs PHOTODETECTORS BY USING DIGITAL GRADED HETEROINTERFACES SUPERLATTICE 期刊论文  OAI收割 JOURNAL OF INFRARED AND MILLIMETER WAVES, 2009, 卷号: 28, 期号: 6, 页码: 405-409 Wang, K; Zhang, YG(张永刚）; Gu, Y; Li, C; Li, HSBY; Li, YY 收藏  |  浏览/下载：7/0  |  提交时间：2012/03/24 PHOTODIODES   Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 7, 页码: 1881-1884 Zhang, YG(张永刚）; Gu, Y; Tian, ZB; Wang, K; Li, AZ; Zhu, XR; Zheng, YL 收藏  |  浏览/下载：10/0  |  提交时间：2012/03/24 VAPOR-PHASE EPITAXY  DARK CURRENT  PHOTODIODES  OPTIMIZATION  DETECTORS   Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 9 Article Number, 页码: 095006 Wang, L; Bao, XC; Zhang, WJ; Li, C; Yuan, YG; Xu, JT; Zhang, Y; Li, XY 收藏  |  浏览/下载：8/0  |  提交时间：2012/05/12 Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations 期刊论文  OAI收割 INFRARED PHYSICS & TECHNOLOGY, 2008, 卷号: 51, 期号: 4, 页码: 316-321 Zhang, YG(张永刚）; Gu, Y; Tian, ZB; Li, AZ; Zhu, XR; Zheng, YL 收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24 VAPOR-PHASE EPITAXY  GAS-SOURCE MBE  DARK CURRENT  PHOTODETECTORS  DETECTORS  MOCVD   Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 mu m 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 6, 页码: 2292-2295 Tian, ZB; Gu, Y; Wang, K; Zhang, YG(张永刚） 收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24 2.6 MU-M  PHOTODIODES  CAMERA   Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 卷号: 23, 期号: 12, 页码: 125029-125029 Zhang, YG(张永刚）; Gu, Y; Wang, K; Li, AZ; Li, C 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/24 VAPOR-PHASE EPITAXY  PHOTODIODES  LAYERS  GAAS  EFFICIENCY  CUTOFF   Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations 期刊论文  OAI收割 INFRARED PHYSICS & TECHNOLOGY, 2008, 卷号: 51, 期号: 4, 页码: 316-321 Zhang, YG; Gu, Y; Tian, ZB; Li, AZ; Zhu, XR; Zheng, YL 收藏  |  浏览/下载：12/0  |  提交时间：2013/05/10 Instruments & Instrumentation  Physics  Optics  Applied