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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [12]
采集方式
OAI收割 [12]
内容类型
期刊论文 [11]
会议论文 [1]
发表日期
2011 [1]
2010 [1]
2009 [4]
2008 [1]
2000 [1]
1998 [1]
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学科主题
半导体物理 [12]
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Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts
期刊论文
OAI收割
journal of colloid and interface science, JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2011, 2011, 卷号: 358, 358, 期号: 2, 页码: 334-337, 334-337
作者:
Meng XQ
;
Liu CR
;
Wu FM
;
Li JB
;
Li, JB, Zhejiang Normal Univ, Res Ctr Light Emitting Diodes LED, Jinhua 321004, Peoples R China. jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:54/5
  |  
提交时间:2011/07/05
Sol-gel
ZnO:Er-Yb nanoparticles
Up-conversion
Core/shell
Three-photon processes
NANOCRYSTALLINE YTTRIA
OPTICAL SPECTROSCOPY
GLASSES
LUMINESCENCE
TEMPERATURE
ER3+
YB3+
GREEN
FILMS
OXIDE
Sol-gel
Zno:Er-yb Nanoparticles
Up-conversion
Core/shell
Three-photon Processes
Nanocrystalline Yttria
Optical Spectroscopy
Glasses
Luminescence
Temperature
Er3++
Yb3++
Green
Films
Oxide
Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 8, 页码: art. no. 083704, Art. No. 083704
作者:
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
  |  
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/05/24
AUGMENTED-WAVE METHOD
Augmented-wave Method
Electronic-structure
Semiconductors
Films
Znse
Znte
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:
Zhu JJ
;
Zhang SM
;
Jiang DS
;
Zhao DG
;
Yang H
收藏
  |  
浏览/下载:191/56
  |  
提交时间:2010/03/08
aluminium compounds
claddings
gallium compounds
III-V semiconductors
indium compounds
quantum well lasers
refractive index
waveguide lasers
Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:
Hao GD
收藏
  |  
浏览/下载:129/28
  |  
提交时间:2010/03/08
CONTINUOUS-WAVE OPERATION
QUANTUM-WELLS
LASER-DIODES
ORIENTATION
SEMICONDUCTORS
DEPENDENCE
ANISOTROPY
SEMIPOLAR
SAPPHIRE
FILMS
Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 053107
作者:
Tan PH
;
Liu J
收藏
  |  
浏览/下载:61/1
  |  
提交时间:2010/03/08
colloidal crystals
II-VI semiconductors
infrared spectra
mercury compounds
nanostructured materials
photoluminescence
photonic crystals
semiconductor quantum dots
silicon-on-insulator
Room Temperature Ferromagnetism of Mn Implanted AlInN
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A
;
Sharif R
;
Ali A
;
Zhu JJ
收藏
  |  
浏览/下载:248/25
  |  
提交时间:2010/03/08
MAGNETIC-PROPERTIES
SEMICONDUCTORS
GAN
CR
ALLOYS
GROWTH
FILMS
Effect on nitrogen acceptor as Mg is alloyed into ZnO
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110
Gai, YQ
;
Yao, B
;
Wei, ZP
;
Li, YF
;
Lu, YM
;
Shen, DZ
;
Zhang, JY
;
Zhao, DX
;
Fan, XW
;
Li, JB
;
Xia, JB
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/08
P-TYPE ZNO
II-VI
BAND-GAP
SEMICONDUCTORS
FILMS
MGXZN1-XO
EPITAXY
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
会议论文
OAI收割
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:
Han PD
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/10/29
AlGaN/GaN heterostructures
In-doping
2DEG
electron sheet density
X-ray diffraction
etching
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MOBILITY
GROWTH
FILMS
Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer
期刊论文
OAI收割
philosophical magazine letters, 1998, 卷号: 78, 期号: 3, 页码: 203-211
作者:
Han PD
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/08/12
THREADING DISLOCATION DENSITIES
II-VI COMPOUNDS
MISFIT DISLOCATIONS
SEMICONDUCTORS
ORIGIN
FILMS
1ST-PRINCIPLES CALCULATIONS FOR QUASI-PARTICLE ENERGIES OF GAP AND GAAS
期刊论文
OAI收割
physical review b, 1991, 卷号: 44, 期号: 16, 页码: 8707-8712
WANG JQ
;
GU ZQ
;
LI MF
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
EXCHANGE-CORRELATION POTENTIALS
DENSITY-FUNCTIONAL THEORY
ZINCBLENDE SEMICONDUCTORS
STRUCTURAL-PROPERTIES
ELECTRON
SILICON
PSEUDOPOTENTIALS
DISCONTINUITY
APPROXIMATION
INSULATORS