中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 光电子学 [5]
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High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文  OAI收割
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载:73/0  |  提交时间:2010/03/08
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文  OAI收割
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.)
收藏  |  浏览/下载:54/0  |  提交时间:2010/03/29
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Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文  OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction 期刊论文  OAI收割
materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 133, 期号: 1-3, 页码: 117-123
Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen); Wang YT (Wang Yu-Tian)
收藏  |  浏览/下载:31/0  |  提交时间:2010/04/11
Stress analysis of silica-based arrayed waveguide grating by a finite element method 会议论文  OAI收割
photonics asia symposium 2002, shanghai, peoples r china, oct 14-18, 2002
Deng XQ; Yang QQ; Wang HJ; Hu XW; Wang QM
收藏  |  浏览/下载:18/0  |  提交时间:2010/10/29