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Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体器件 [5]
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Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文  OAI收割
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Li, Z (Li, Z.); Li, CJ (Li, C. J.)
收藏  |  浏览/下载:303/15  |  提交时间:2010/03/29
DLTS  
Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors 期刊论文  OAI收割
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1997, 卷号: 385, 期号: 2, 页码: 321-329
Li Z; Li CJ; Verbitskaya E; Eremin V
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/17
Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations 期刊论文  OAI收割
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1996, 卷号: 377, 期号: 0, 页码: 265-275
Li Z; Li CJ; Eremin V; Verbitskaya E
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/17
Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2) 期刊论文  OAI收割
ieee transactions on nuclear science, 1996, 卷号: 43, 期号: 3, 页码: 1590-1598
Li Z; Ghislotti G; Kraner HW; Li CJ; Nielsen B; Feick H; Lindstroem G
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/17
DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS 期刊论文  OAI收割
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1995, 卷号: 364, 期号: 1, 页码: 108-117
LI CJ; LI Z
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/17