机构

• 半导体研究所 [26]

采集方式

• OAI收割 [26]

内容类型

• 期刊论文 [25]
• 会议论文 [1]

发表日期

• 2010 [1]
• 2009 [6]
• 2008 [1]
• 2006 [4]
• 2005 [1]
• 2003 [1]
• 更多

学科主题

• 半导体物理 [26]

筛选

浏览/检索结果: 共26条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Optical properties of UO2 and PuO2 期刊论文  OAI收割 journal of nuclear materials, JOURNAL OF NUCLEAR MATERIALS, 2010, 2010, 卷号: 400, 400, 期号: 2, 页码: 151-156, 151-156 作者:  Shi HL (Shi Hongliang);  Chu MF (Chu Mingfu);  Zhang P (Zhang Ping);  Zhang, P, Inst Appl Phys & Computat Math, LCP, POB 8009, Beijing 100088, Peoples R China. zhang_ping@iapcm.ac.cn   |  收藏  |  浏览/下载：73/0  |  提交时间：2010/06/18 ELECTRONIC-STRUCTURE  Electronic-structure  Uranium-dioxide  Point-defects  Photoemission  Energy  Approximation  Energetics  Plutonium  Crystal  Spectra  URANIUM-DIOXIDE  POINT-DEFECTS  PHOTOEMISSION  ENERGY  APPROXIMATION  ENERGETICS  PLUTONIUM  CRYSTAL  SPECTRA   Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912 Wang WZ; Deng JJ; Lu J; Sun BQ; Wu XG; Zhao JH 收藏  |  浏览/下载：213/74  |  提交时间：2010/03/08 annealing  Curie temperature  ferromagnetic materials  gallium arsenide  III-V semiconductors  magnetic susceptibility  magnetisation  manganese compounds  nanofabrication  nanostructured materials  RKKY interaction  semiconductor thin films  semimagnetic semiconductors  spin dynamics   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Lattice polarity detection of InN by circular photogalvanic effect 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902 Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A 收藏  |  浏览/下载：64/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  nondestructive testing  photoconductivity  radiation effects  semiconductor thin films  wide band gap semiconductors   Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911 作者:  Chen L 收藏  |  浏览/下载：71/0  |  提交时间：2010/03/08 annealing  gallium arsenide  iron  magnetic anisotropy  magnetic epitaxial layers  magnetisation  molecular beam epitaxial growth  transmission electron microscopy  X-ray diffraction   Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505 作者:  Chen L;  Qian X 收藏  |  浏览/下载：83/39  |  提交时间：2010/03/08 annealing   Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 087802 Ruan J; Yu TJ; Jia CY; Tao RC; Wang ZG; Zhang GY 收藏  |  浏览/下载：87/2  |  提交时间：2010/03/08 QUANTUM-WELL LASERS  OPTICAL GAIN  EMISSION  GAN  PHOTOLUMINESCENCE  SEMICONDUCTORS  LUMINESCENCE  SPECTRA  ORIGIN  ENERGY   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文  OAI收割 thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11 time-resolved photoluminescence  InAs self-assembled QDs  migration of carriers  1.3 MU-M  DEPENDENT RADIATIVE DECAY  THERMAL REDISTRIBUTION  EXCITONS  RECOMBINATION  RELAXATION  LIFETIMES  EMISSION  EPITAXY  LASERS   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529 作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ 收藏  |  浏览/下载：81/0  |  提交时间：2010/04/11 molecular beam epitaxy  quantum wells  semiconducting III-V materials  MU-M  LASERS  TEMPERATURE  SURFACTANT  NM