中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共4条，第1-4条

帮助

条数/页：排序方式：
	AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文 OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏 \| 浏览/下载：46/0 \| 提交时间：2010/03/09 PERFORMANCE HETEROSTRUCTURES OPTIMIZATION MOBILITY
	Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏 \| 浏览/下载：61/12 \| 提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY FE-DOPED INP POINT-DEFECTS COMPENSATION TEMPERATURE DONORS TRAPS
	Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文 OAI收割 journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841 Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏 \| 浏览/下载：291/4 \| 提交时间：2010/08/12 P-TYPE GAN LIGHT-EMITTING-DIODES LOCALIZED EXCITONS GALLIUM NITRIDE FILMS DEFECTS LUMINESCENCE COMPENSATION SPECTROSCOPY ACCEPTORS
	Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 209, 期号: 1, 页码: 203-207 作者: Zhao DG 收藏 \| 浏览/下载：46/0 \| 提交时间：2010/08/12 annealing cubic GaN Mg doping photoluminescence MOLECULAR-BEAM EPITAXY III-V NITRIDE P-TYPE GAN OPTICAL-PROPERTIES COMPENSATION DIODES FILMS