机构

• 半导体研究所 [8]
• 苏州纳米技术与纳米仿... [2]

采集方式

• OAI收割 [10]

内容类型

• 会议论文 [10]

发表日期

• 2013 [1]
• 2011 [1]
• 2008 [1]
• 2006 [1]
• 2004 [1]
• 2001 [3]
• 更多

学科主题

• 半导体材料 [6]
• 半导体物理 [2]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Terahertz plasmon polariton formed in a Fabry-Perot cavity and a grating-coupled two-dimensional electron gas 会议论文  OAI收割 5th International Symposium on Photoelectronic Detection and Imaging (ISPDI) - Terahertz Technologies and Applications, Beijing, PEOPLES R CHINA, JUN 25-27, 2013 作者:  Huang, YD(黄永丹);  Zhang, BS(张宝顺);  Qin, H(秦华) 收藏  |  浏览/下载：30/0  |  提交时间：2014/01/15 2D plasmons  Fabry-Perot cavity  Terahertz time-domain spectroscopy  GaN/AlGaN heterostructure   A Terahertz Detector Based on AlGaN/GaN High Electron Mobility Transistor with Bowtie Antennas 会议论文  OAI收割 30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul, SOUTH KOREA, JUL 25-30, 2010 作者:  Wu, DM (吴东岷);  Qin, H (秦华);  Zhang, ZP (张志鹏);  Zen, CH (曾春红);  Sun, YF (孙云飞) 收藏  |  浏览/下载：27/0  |  提交时间：2012/08/24 terahertz detector  bowtie antenna  high electron mobility transistor  selfmixing  two dimensional electron gas  FDTD   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  2-DIMENSIONAL ELECTRON-GAS  BULK GAN  OPTIMIZATION  LAYERS  HEMTS   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS   High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 molecular beam epitaxy  high electron mobility transistors  DENSITY   High-quality GaN grown by gas-source MBE 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 characterization  molecular beam epitaxy  gallium compounds  nitrides  piezoelectric materials  semiconducting gallium compounds  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURES  SAPPHIRE  DIODES   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  MOBILITY   Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文  OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Han PD 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 AlGaN/GaN heterostructures  In-doping  2DEG  electron sheet density  X-ray diffraction  etching  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MOBILITY  GROWTH  FILMS   Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文  OAI收割 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 作者:  Liu J 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 GaAs/AlAs  superlattices  transport  tunnelling  Landau level  NEGATIVE DIFFERENTIAL CONDUCTIVITY  LOW-FIELD MOBILITY  SEMICONDUCTOR SUPERLATTICE  TEMPERATURE-DEPENDENCE  CONDUCTANCE  TRANSPORT  LOCALIZATION  MINIBANDS