机构

• 合肥物质科学研究院 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2021 [1]
• 2020 [1]
• 2019 [2]
• 2018 [1]
• 2017 [5]
• 2016 [2]
• 更多

学科主题

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 专题：合肥物质科学研究院    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Facile template-free preparation of silver-coated Cu3SbS4 hollow spheres with enhanced photoelectric properties 期刊论文  OAI收割 JOURNAL OF MATERIALS CHEMISTRY C, 2021, 卷号: 10 作者:  Meng, Xiang;  Chen, Xihao;  Cheng, Jiang;  Zhai, Fuqiang;  Li, Wen   |  收藏  |   Investigation of TiN film on an RF ceramic window by atomic layer deposition 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 卷号: 38 作者:  Peng, Zhen;  Chen, Gen;  Zhao, Yan-Ping;  Zhang, Xin;  Song, Yun-Tao   |  收藏  |   Analysis of deposited layers with deuterium and impurity elements on samples from the divertor of JET with ITER-like wall 期刊论文  OAI收割 JOURNAL OF NUCLEAR MATERIALS, 2019, 卷号: 516, 期号: 无, 页码: 202-213 作者:  Strom, P.;  Petersson, P.;  Rubel, M.;  Fortuna-Zalesna, E.;  Widdowson, A.   |  收藏  |   Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587 作者:  Wang, Die;  He, Gang   |  收藏  |   Sequential deposition route to efficient Sb2S3 solar cells 期刊论文  OAI收割 JOURNAL OF MATERIALS CHEMISTRY A, 2018, 卷号: 6, 期号: 43, 页码: 21320-21326 作者:  Zhang, Lijian;  Wu, Chunyan;  Liu, Weifeng;  Yang, Shangfeng;  Wang, Mingtai   |  收藏  |   Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling 期刊论文  OAI收割 NATURE COMMUNICATIONS, 2017, 卷号: 8 作者:  Yin, Xinmao;  Wang, Qixing;  Cao, Liang;  Tang, Chi Sin;  Luo, Xin   |  收藏  |   Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling 期刊论文  OAI收割 NATURE COMMUNICATIONS, 2017, 卷号: 8 作者:  Yin, Xinmao;  Wang, Qixing;  Cao, Liang   |  收藏  |   Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6 作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin 收藏  |   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328 作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D. 收藏  |   Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513 作者:  Gao, J.;  He, G.;  Liu, M. 收藏  |