机构

• 半导体研究所 [4]
• 长春光学精密机械与物... [2]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [7]

内容类型

• 会议论文 [7]

发表日期

• 2014 [1]
• 2012 [1]
• 2006 [1]
• 2004 [1]
• 2000 [2]
• 1999 [1]
• 更多

学科主题

• 半导体材料 [2]
• 半导体物理 [2]
• 数理科学和化学 ::... [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Design and fabrication of BaTiO3 crystal thin-film waveguides 会议论文  OAI收割 15th Annual Conference and 4th International Conference of the Chinese Society of Micro-Nano Technology, CSMNT 2013, November 3, 2013 - November 6, 2013, Tianjin, China 作者:  Zhang J.;  Fu X.-H.;  Zhang J.;  Zhang J. 收藏  |  浏览/下载：18/0  |  提交时间：2015/04/27 Effect of adding Cr on magnetic properties and metallic behavior in MnTe film (EI CONFERENCE) 会议论文  OAI收割 作者:  Li J.;  Li J.;  Li J. 收藏  |  浏览/下载：35/0  |  提交时间：2013/03/25 Mn1 - xCrxTe films with x = 0  0.02  and 0.05 was synthesized by pulsed laser deposition and crystallize in hexagonal NiAs-type structure. The spin glass behavior predicted before by Monte Carlo calculation is observed in the MnTe film. This behavior is destroyed by adding Cr in the MnTe film. The temperature dependence of magnetization shows a sharp rise at around 66 K  due to the magneto-elastic coupling. Metallic behavior is observed in the MnTe film in the temperature range 120-220 K  which is ascribed to the magnetic ordering. The metallic behavior disappears with adding Cr  because adding Cr ions destroys the magnetic ordering which is mediated by the sp-d exchange interaction between the Cr ions. 2012 Elsevier B.V.   Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文  OAI收割 20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005 Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP 收藏  |  浏览/下载：94/18  |  提交时间：2010/03/29 ZnO  MOCVD  thermal annealing  photoluminescence  x-ray diffraction  atomic force microscopy  PULSED-LASER DEPOSITION  THIN-FILMS  PHOTOLUMINESCENCE  MECHANISMS  EPITAXY  CVD  SI   Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文  OAI收割 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Zhang YH;  Jiang DS 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  GaAsSb/GaAs  GAAS  LASERS  GAIN   CaS:Eu, Sm films prepared by pulsed laser deposition 会议论文  OAI收割 作者:  Fan WH(范文慧);  Fan WH(范文慧) 收藏  |  浏览/下载：10/0  |  提交时间：2011/01/11 Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS   New way to enhance the uniformity of self-organized InAs quantum dots 会议论文  OAI收割 25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998 Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY  THRESHOLD  GROWTH  LASER