机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2011 [1]
• 2010 [1]
• 2007 [1]
• 2006 [2]
• 2004 [1]
• 2003 [2]
• 更多

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Characteristics of charge density waves on the surfaces of quasi-one-dimensional charge-transfer complex layered organic crystals 期刊论文  OAI收割 physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.125434 Lin F; Huang XM; Qu SC; Fang ZY; Huang S; Song WT; Zhu X; Liu ZF 收藏  |  浏览/下载：50/5  |  提交时间：2011/07/05 SCANNING-TUNNELING-MICROSCOPY  MOLECULAR CONDUCTORS  PHASE-TRANSITION  TETRACYANOQUINODIMETHANE  (EDO-TTF)(2)PF6  DERIVATIVES  TTF   Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110) 期刊论文  OAI收割 journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7162-7166 Lin F (Lin Feng); Fang ZY (Fang Zheyu); Qu SC (Qu Shengchun); Huang S (Huang Shan); Song WT (Song Wentao); Chi LF (Chi Lifeng); Zhu X (Zhu Xing) 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/30 MOLECULAR-BEAM DEPOSITION  QUASIEPITAXIAL GROWTH  ORGANIC FILMS  LEED  PTCDA  STM  MONOLAYERS  GRAPHITE   Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866 Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG 收藏  |  浏览/下载：64/5  |  提交时间：2010/03/08 III-V semiconductors  quantum dots  scanning electron microscopy  selective etching   Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文  OAI收割 thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162 Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 chemical vapour deposition  electrical properties and measurements  scanning electron microscopy  polycrystalline silicon  GRAIN-BOUNDARIES  STATES   Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文  OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211 作者:  Jin P;  Ye XL 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 SCANNING-TUNNELING-MICROSCOPY  ANISOTROPY SPECTROSCOPY  GROWTH  GAAS  SURFACES  ALAS   Fabrication of GdSi2 film by low-energy ion-beam implantation 期刊论文  OAI收割 journal of crystal growth, 2004, 卷号: 262, 期号: 1-4, 页码: 186-190 Li YL; Chen NF; Zhou JP; Song SL; Yang SY; Liu ZK 收藏  |  浏览/下载：43/14  |  提交时间：2010/03/09 scanning electron microscopy   Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54 作者:  Xu B 收藏  |  浏览/下载：58/0  |  提交时间：2010/08/12 photoluminescence  molecular beam epitaxy  nanomaterials  semiconducting III-V materials  SCANNING-TUNNELING-MICROSCOPY  GROWTH  INP   Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 scanning electron microscopy  X-ray diffraction  Metalorganic vapor phase epitaxy  selective area growth  gallium nitride  CUBIC GAN  OVERGROWN GAN  DEPOSITION  GAAS(100)   Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 630-636 Wang HL; Ning D; Feng SL 收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12 self-organized quantum dots  InAs/GaAs  MBE  PL  STM  bimodal size distribution  MOLECULAR-BEAM EPITAXY  ELECTRONIC-STRUCTURE  CARRIER RELAXATION  GROWTH  PHOTOLUMINESCENCE  TRANSITION   TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy 期刊论文  OAI收割 defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65 作者:  Han PD 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 HREM  large-angle stereo-projection  misfit dislocations  stacking faults  TEM  LAYER  SUPERLATTICES  ELECTRON-MICROSCOPY