中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
采集方式
OAI收割 [6]
内容类型
期刊论文 [6]
发表日期
2011 [2]
2008 [1]
2001 [3]
学科主题
半导体物理 [6]
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Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism
期刊论文
OAI收割
solid state communications, SOLID STATE COMMUNICATIONS, 2011, 2011, 卷号: 151, 151, 期号: 6, 页码: 456-459, 456-459
作者:
Wu H
;
Gan HD
;
Zheng HZ
;
Lu J
;
Zhu H
  |  
收藏
  |  
浏览/下载:62/5
  |  
提交时间:2011/07/05
Magnetic semiconductors
Molecular beam epitaxy
Magneto-optical effects
TRANSPORT-PROPERTIES
SEMICONDUCTOR
(GA,CR)AS
Magnetic Semiconductors
Molecular Beam Epitaxy
Magneto-optical Effects
Transport-properties
Semiconductor
(Ga
Cr)As
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
OAI收割
journal of crystal growth, JOURNAL OF CRYSTAL GROWTH, 2011, 2011, 卷号: 316, 316, 期号: 1, 页码: 145-148, 145-148
作者:
Yang GD
;
Zhu F
;
Dong S
;
Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com
  |  
收藏
  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
Diffusion
Physical Vapor Deposition Processes
Magnetic Materials
Semiconducting Iii-v Materials
Gasb/mn Digital Alloys
Room-temperature Ferromagnetism
Raman-scattering
Magnetotransport Properties
Epitaxial Layers
Thin-films
Semiconductors
Strain
Magnetoelectronics
Spintronics
Tuning of plasmon propagation in two-dimensional electrons
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 25, 页码: art. no. 251501
Li C
;
Wu XG
收藏
  |  
浏览/下载:224/75
  |  
提交时间:2010/03/08
field effect transistors
plasmons
semiconductor heterojunctions
spin-orbit interactions
two-dimensional electron gas
The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
期刊论文
OAI收割
solid-state electronics, 2001, 卷号: 45, 期号: 5, 页码: 751-754
Cao X
;
Zeng YP
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:102/6
  |  
提交时间:2010/08/12
molecular beam epitaxy
pseudomorphic HEMTs
photoluminescence
Growth and characterization of InGaAs/InAlAs quantum cascade lasers
期刊论文
OAI收割
solid-state electronics, 2001, 卷号: 45, 期号: 10, 页码: 1831-1835
作者:
Xu B
收藏
  |  
浏览/下载:88/11
  |  
提交时间:2010/08/12
quantum cascade laser
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
MU-M
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
期刊论文
OAI收割
solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157
Wang LS
;
Fong WK
;
Surya C
;
Cheah KW
;
Zheng WH
;
Wang ZG
收藏
  |  
浏览/下载:73/5
  |  
提交时间:2010/08/12
p-type GaN
metalorganic chemical vapor deposition
photoluminescence
X-ray diffraction
rapid-thermal annealing
P-TYPE GAN
RECOMBINATION
EMISSION
ENERGY
BANDS