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Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体材料 [5]
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X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate 期刊论文  OAI收割
thin solid films, 2001, 卷号: 392, 期号: 1, 页码: 29-33
Qu B; Zheng XH; Wang YT; Feng ZH; Liu SA; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载:101/13  |  提交时间:2010/08/12
Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure 期刊论文  OAI收割
journal of crystal growth, 2001, 卷号: 226, 期号: 1, 页码: 57-61
Qu B; Zheng XH; Wang YT; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载:88/13  |  提交时间:2010/08/12
The effects of carbonized buffer layer on the growth of SiC on Si 会议论文  OAI收割
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Wang YS; Li JM; Zhang FF; Lin LY
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
The effects of carbonized buffer layer on the growth of SiC on Si 期刊论文  OAI收割
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 564-567
Wang YS; Li JM; Zhang FF; Lin LY
收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
Twin and grain boundary in InP: A synchrotron radiation study 会议论文  OAI收割
symposium on applications of synchrotron radiation techniques to materials science iv, san francisco, ca, apr 13-17, 1998
Han YJ; Jiang JH; Wang ZG; Liu XL; Jiao JH; Tian YL; Lin LY
收藏  |  浏览/下载:14/0  |  提交时间:2010/10/29