机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 会议论文 [6]

发表日期

• 2008 [5]
• 2006 [1]

学科主题

• 半导体材料 [5]
• 光电子学 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文  OAI收割 conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007 Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 hydrogen sensor  AlGaN/GaN heterostructure  Schottky diode   The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM 收藏  |  浏览/下载：166/71  |  提交时间：2010/03/29 ALN  IMPURITIES  DONOR