机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2016 [2]
• 2015 [2]
• 2012 [2]
• 2011 [1]
• 2007 [3]
• 2006 [1]
• 更多

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector 期刊论文  OAI收割 applied physics letters, 2016, 卷号: 108, 期号: 25, 页码: 251103(1-5) Feng-Jiao Wang; Ning Zhuo; Shu-Man Liu; Fei Ren; Zhen-Dong Ning; Xiao-Ling Ye; Jun-Qi Liu; Shen-Qiang Zhai; Feng-Qi Liu; Zhan-Guo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Dual-wavelength intersubband electroluminescence from double-well active layers in InGaAs/InAlAs quantum cascade structures 期刊论文  OAI收割 applied physics express, 2016, 卷号: 9, 期号: 5, 页码: 052104 Fei Ren; Feng-Jiao Wang; Shu-Man Liu; Zhen-Dong Ning; Ning Zhuo; Xiao-Ling Ye; Jun-Qi Liu; Li-Jun Wang; Feng-Qi Liu; Zhan-Guo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77% 期刊论文  OAI收割 chin. phys. lett., 2015, 卷号: 32, 期号: 8, 页码: 088401 Liu Shi-Ming; Xiao Hong-Ling; Wang Quan; Yan Jun-Da; Zhan Xiang-Mi; Gong Jia-Min; Wang Xiao-Liang; Wang Zhan-Guo 收藏  |  浏览/下载：21/0  |  提交时间：2016/03/29 Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文  OAI收割 chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301 Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29 Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 160 Li, Li-Gong; Liu, Shu-Man; Luo, Shuai; Yang, Tao; Wang, Li-Jun; Liu, Feng-Qi; Ye, Xiao-Ling; Xu, Bo; Wang, Zhan-Guo 收藏  |  浏览/下载：9/0  |  提交时间：2013/05/07 Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2012, 卷号: 359, 页码: 55-59 Li LG (Li, Li-Gong); Liu SM (Liu, Shu-Man); Luo S (Luo, Shuai); Yang T (Yang, Tao); Wang LJ (Wang, Li-Jun); Liu JQ (Liu, Jun-Qi); Liu FQ (Liu, Feng-Qi); Ye XL (Ye, Xiao-Ling); Xu B (Xu, Bo); Wang ZG (Wang, Zhan-Guo) 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/26 Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802 Li LG (Li Li-Gong); Liu SM (Liu Shu-Man); Luo S (Luo Shuai); Yang T (Yang Tao); Wang LJ (Wang Li-Jun); Liu FQ (Liu Feng-Qi); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：9/0  |  提交时间：2012/02/21 The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 期刊论文  OAI收割 chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471 Liu Z (Liu Zhe); Wang XL (Wang Xiao-Liang); Wang JX (Wang Jun-Xi); Hu GX (Hu Guo-Xin); Guo LC (Guo Lun-Chun); Li JM (Li Jin-Min) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 GaN   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：69/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935 Hu LJ (Hu Liang-Jun); Chen YH (Chen Yong-Hai); Ye XL (Ye Xiao-Ling); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 ion implantation