机构

• 半导体研究所 [5]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2013 [1]
• 2010 [4]

学科主题

• 半导体材料 [5]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Photoluminescence properties of porous InP filled with ferroelectric polymers 期刊论文  OAI收割 applied physics a-materials science & processing, 2013, 卷号: 111, 期号: 3, 页码: 695-699 Jia, C. H.; Chen, Y. H.; Jiang, Y. C.; Liu, F. Q.; Qu, S. C.; Zhang, W. F.; Wang, Z. G. 收藏  |   Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |   Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature 期刊论文  OAI收割 microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837 Peng YS (Peng Y. S.); Xu B (Xu B.); Ye XL (Ye X. L.); Niu JB (Niu J. B.); Jia R (Jia R.); Wang ZG (Wang Z. G.) 收藏  |   In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516 Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.) 收藏  |   Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |