机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [12]

发表日期

• 2016 [1]
• 2015 [4]
• 2012 [1]
• 2009 [2]
• 2007 [3]
• 2003 [1]
• 更多

学科主题

• 半导体物理 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors 期刊论文  OAI收割 physical review letters, 2016, 卷号: 117, 期号: 16, 页码: 165901 Hui-Xiong Deng; Jun-Wei Luo; Shu-Shen Li; Su-Huai Wei 收藏  |  浏览/下载：30/0  |  提交时间：2017/03/16 Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets 期刊论文  OAI收割 nanoscale, 2015, 卷号: 7, 期号: 33, 页码: 14093-14099 Yun Huang; Hui-Xiong Deng; Kai Xu; Zhen-Xing Wang; Qi-Sheng Wang; Feng-Mei Wang; Feng Wang; Xue-Ying Zhan; Shu-Shen Li; Jun-Wei Luo; Jun He 收藏  |  浏览/下载：28/0  |  提交时间：2016/03/29 Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文  OAI收割 Nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762 Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He 收藏  |  浏览/下载：20/0  |  提交时间：2016/04/08 Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces 期刊论文  OAI收割 physical review b, 2015, 卷号: 91, 期号: 7, 页码: 075315 Hui-Xiong Deng; Jun-Wei Luo; Su-Huai Wei 收藏  |  浏览/下载：14/0  |  提交时间：2016/03/29 Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文  OAI收割 nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762 Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He 收藏  |  浏览/下载：12/0  |  提交时间：2016/03/29 Novel Sb-based type-II superlattices infrared detectors 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2012, 2012, 卷号: 41, 41, 期号: 12, 页码: 3141-3144, 3141-3144 作者:  Shi, Yanli;  He, Wenjin;  Zhang, Weifeng;  Wang, Yu;  Yuan, Jun   |  收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07 Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 12, 页码: art.no.127101 Wang, WJ (Wang Wen-Jie); Deng, JJ (Deng Jia-Jun); Fu, XQ (Fu Xing-Qiu); Hu, B (Hu Bing); Ding, K (Ding Kun) 收藏  |  浏览/下载：230/52  |  提交时间：2010/03/08 TEMPERATURE-DEPENDENCE   Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510 Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang) 收藏  |  浏览/下载：158/62  |  提交时间：2010/03/08 ELECTRONIC-STRUCTURE   Electron irradiation induced defects in high temperature annealed InP single crystal 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1603-1607 Wang B (Wang Bo); Zhao YW (Zhao You-Wen); Dong ZY (Dong Zhi-Yuan); Deng AH (Deng Ai-Hong); Miao SS (Miao Shan-Shan); Yang J (Yang Jun) 收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29 InP   Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171 Yang, J (Yang Jun); Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan); Deng, AH (Deng Ai-Hong); Miao, SS (Miao Shan-Shan); Wang, B (Wang Bo) 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29 InP