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浏览/检索结果: 共310条，第1-10条 帮助

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Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 2014, 卷号: 47, 47, 期号: 11, 页码: 115102, 115102
作者:  Tian, T;  Wang, LC;  Guo, EQ;  Liu, ZQ;  Zhan, T
  |  收藏  |  浏览/下载：23/0  |  提交时间：2015/04/02
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 115, 115, 期号: 8, 页码: 083112, 083112
作者:  Li, Z;  Kang, JJ;  Wang, BW;  Li, HJ;  Weng, YH
  |  收藏  |  浏览/下载：26/0  |  提交时间：2015/03/19
Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes 期刊论文  OAI收割
optics express, OPTICS EXPRESS, 2014, 2014, 卷号: 22, 22, 期号: 9, 页码: a1001-a1008, A1001-A1008
作者:  Ji, XL;  Wei, TB;  Yang, FH;  Lu, HX;  Wei, XC
  |  收藏  |  浏览/下载：14/0  |  提交时间：2015/04/02
Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer 期刊论文  OAI收割
displays, 2012, 卷号: 33, 期号: 1, 页码: 17-20
Li, LS; Guan, M; Cao, GH; Li, YY; Zeng, YP
收藏  |  浏览/下载：7/0  |  提交时间：2013/03/17
Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres 期刊论文  OAI收割
japanese journal of applied physics, JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 51, 51, 期号: 2，part 1, 页码: 20204, 20204
作者:  Zhang, YY;  Li, J;  Wei, TB
  |  收藏  |  浏览/下载：9/0  |  提交时间：2013/03/17
Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes 期刊论文  OAI收割
optics express, OPTICS EXPRESS, 2012, 2012, 卷号: 20, 20, 期号: 6, 页码: 6808-6815, 6808-6815
作者:  Zhang, YY;  Xie, HZ;  Zheng, HY;  Wei, TB;  Yang, H
  |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17
Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 111, 111, 期号: 11, 页码: 114501, 114501
作者:  Zhang, YY;  Wang, LC;  Li, X;  Yi, XY;  Zhang, N
  |  收藏  |  浏览/下载：5/0  |  提交时间：2013/03/17
Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 13, 页码: 131101, 131101
作者:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi)
  |  收藏  |  浏览/下载：22/0  |  提交时间：2013/03/27
Interface and transport properties of GaN/graphene junction in GaN-based LEDs 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 2012, 卷号: 45, 45, 期号: 50, 页码: 505102, 505102
作者:  Wang LC (Wang, Liancheng);  Zhang YY (Zhang, Yiyun);  Li X (Li, Xiao);  Liu ZQ (Liu, Zhiqiang);  Guo EQ (Guo, Enqing)
  |  收藏  |  浏览/下载：15/0  |  提交时间：2013/03/20
Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 6, 页码: 061102, 061102
作者:  Wang LC (Wang, Liancheng);  Zhang YY (Zhang, Yiyun);  Li X (Li, Xiao);  Liu ZQ (Liu, Zhiqiang);  Guo EQ (Guo, Enqing)
  |  收藏  |  浏览/下载：18/0  |  提交时间：2013/04/02