中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [2]
近代物理研究所 [2]
采集方式
OAI收割 [4]
内容类型
会议论文 [4]
发表日期
2013 [2]
2007 [1]
2006 [1]
学科主题
光电子学 [1]
半导体材料 [1]
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Progress in Heavy Ion Cancer Therapy at IMP
会议论文
OAI收割
China Inst Atom Energy (CIAE), Beijing, PEOPLES R CHINA, OCT 15-19, 2012
作者:
Li, Qiang
;
Liu, Xinguo
;
Dai, Zhongying
;
Shen, Guosheng
;
He, Pengbo
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2018/08/20
heavy ion therapy
beam delivery
treatment planning
clinical trial
dedicated heavy-ion therapy facility
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
会议论文
OAI收割
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Sun, G (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Liu, X (Liu, Xingfang)
;
Zhao, Y (Zhao, Yongmei)
;
Li, J (Li, Jiaye)
;
Wang, L (Wang, Lei)
;
Zhao, W (Zhao, Wanshun)
;
Wang, L (Wang, Liang)
收藏
  |  
浏览/下载:87/29
  |  
提交时间:2010/03/29
polycrystalline 3C-SiC
resonator
doping
SILICON-CARBIDE
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
OAI收割
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:99/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes