机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2017 [4]
• 2013 [2]
• 2012 [1]
• 2010 [2]

学科主题

• 半导体物理 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides 期刊论文  OAI收割 Physical Review B, 2017, 卷号: 96, 期号: 16, 页码: 165402 作者:  Zhi-Qiang Fan;  Xiang-Wei Jiang;  Jun-Wei Luo;  Li-Ying Jiao;  Ru Huang 收藏  |  浏览/下载：48/0  |  提交时间：2018/06/15 Electric field-tunable electronic structures of 2D alkaline-earth metal hydroxide–graphene heterostructures 期刊论文  OAI收割 Journal of Materials Chemistry C, 2017, 卷号: 5, 页码: 7230--7235 作者:  Congxin Xia;  Qiang Gao;  Wenqi Xiong;  Juan Du;  Xu Zhao 收藏  |  浏览/下载：25/0  |  提交时间：2018/06/15 Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice 期刊论文  OAI收割 Infrared Physics & Technology, 2017, 卷号: 86, 页码: 159–164 作者:  Zhi Jiang;  Xi Han;  Yao-Yao Sun;  Chun-Yan Guo;  Yue-Xi Lv 收藏  |  浏览/下载：40/0  |  提交时间：2018/06/15 Type-I Ca(OH)2/a-MoTe2 vdW heterostructure for ultraviolet optoelectronic device applications: electric field effects 期刊论文  OAI收割 Journal of Materials Chemistry C, 2017, 卷号: 5, 页码: 12629--12634 作者:  Qiang Gao;  Congxin Xia;  Wenqi Xiong;  Juan Du 收藏  |  浏览/下载：15/0  |  提交时间：2018/06/15 High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文  OAI收割 Chin.Phys.B, Chin.Phys.B, 2013, 2013, 卷号: 23, 23, 期号: 1, 页码: 017805, 017805 作者:  Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan   |  收藏  |  浏览/下载：14/0  |  提交时间：2014/03/26 Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文  OAI收割 journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 1, 页码: 013704, 013704 作者:  Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu   |  收藏  |  浏览/下载：24/0  |  提交时间：2014/03/26 Defect of Te-doped GaSb layers grown by molecular beam epitaxy 期刊论文  OAI收割 journal of infrared and millimeter waves, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 2012, 卷号: 31, 31, 期号: 4, 页码: 298-301, 298-301 作者:  Chen Y (Chen Yan);  Deng AH (Deng Ai-Hong);  Tang B (Tang Bao);  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang)   |  收藏  |  浏览/下载：11/0  |  提交时间：2013/04/02 Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection 期刊论文  OAI收割 chinese physics letters, CHINESE PHYSICS LETTERS, 2010, 2010, 卷号: 27, 27, 期号: 7, 页码: art. no. 077305, Art. No. 077305 作者:  Wang GW (Wang Guo-Wei);  Xu YQ (Xu Ying-Qiang);  Guo J (Guo Jie);  Tang B (Tang Bao);  Ren ZW (Ren Zheng-Wei)   |  收藏  |  浏览/下载：26/0  |  提交时间：2010/08/17 IR DETECTION MODULES  Ir Detection Modules  Inas  INAS   Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 7, 页码: art. no. 073108, Art. No. 073108 作者:  Zhu YH (Zhu Yuan-Hui);  Xu Q (Xu Qiang);  Fan WJ (Fan Wei-Jun);  Wang JW (Wang Jian-Wei);  Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg   |  收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07 ALLOYS  Alloys  Ge  GE