机构

• 半导体研究所 [40]

采集方式

• OAI收割 [40]

内容类型

• 期刊论文 [40]

发表日期

• 2009 [6]
• 2008 [3]
• 2007 [1]
• 2005 [1]
• 2003 [3]
• 2001 [4]
• 更多

学科主题

• 半导体物理 [40]

筛选

浏览/检索结果: 共40条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  MOLECULAR-BEAM-EPITAXY  FILMS  MISFIT   Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: art. no. 076104 作者:  Wang LJ;  Yang H;  Jiang DS;  Zhao DG;  Zhang SM 收藏  |  浏览/下载：77/0  |  提交时间：2010/03/08 DENSITIES  CRYSTALS  LAYERS   The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文  OAI收割 chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui) 收藏  |  浏览/下载：129/35  |  提交时间：2010/03/08 GaN   Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957 Zhang S (Zhang Shuang); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Duan LH (Duan Li-Hong); Liu WB (Liu Wen-Bao); Jiang DS (Jiang De-Sheng); Yang H (Yang Hui) 收藏  |  浏览/下载：137/40  |  提交时间：2010/03/08 GaN   Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H 收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08 edge dislocations  gallium compounds  III-V semiconductors  impurities  photoluminescence  semiconductor doping  semiconductor thin films  silicon  wide band gap semiconductors  X-ray diffraction   Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102 作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT 收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  FUNDAMENTAL-BAND GAP  NANOWIRES  HETEROSTRUCTURES  NANOSTRUCTURES  MOCVD  POLAR   Photoelectric characteristics of metal/InGaN/GaN heterojunction structure 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165108 Sun, X; Liu, WB; Jiang, DS; Liu, ZS; Zhang, S; Wang, LL; Wang, H; Zhu, JJ; Duan, LH; Wang, YT; Zhao, DG; Zhang, SM; Yang, H 收藏  |  浏览/下载：64/0  |  提交时间：2010/03/08 FUNDAMENTAL-BAND GAP  IN1-XGAXN ALLOYS  INN   Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4143-4146 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Wang, YT; Yang, H 收藏  |  浏览/下载：14/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  EPITAXIAL GAN  DEPENDENCE  PHOTOLUMINESCENCE  GROWTH  FILMS   Structural properties of ne implanted GaN 期刊论文  OAI收割 physica scripta, 2008, 卷号: 77, 期号: 3, 页码: art. no. 035601 作者:  Zhu JJ;  Yang H;  Liu W;  Liu W;  Lu GJ 收藏  |  浏览/下载：44/2  |  提交时间：2010/03/08 RAMAN-SCATTERING   Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction 期刊论文  OAI收割 physica scripta, 2007, 卷号: t129, 页码: 27-30 Qiu, YX; Li, MC; Wang, YT; Zhang, BS; Wang, Y; Liu, GJ; Zhao, LC 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/08 FILMS