机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2016 [2]
• 2014 [1]
• 2013 [3]
• 2012 [4]
• 2011 [1]

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Disorder-induced topological phase transitions in two-dimensional spin-orbit coupled superconductors 期刊论文  OAI收割 scientific reports, 2016, 卷号: 6, 页码: 39188 Wei Qin; Di Xiao; Kai Chang; Shun-Qing Shen; Zhenyu Zhang 收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10 Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文  OAI收割 acs nano., 2016, 卷号: 10, 期号: 3, 页码: 3852−3858 Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai 收藏  |  浏览/下载：43/0  |  提交时间：2017/03/10 Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文  OAI收割 journal of crystal growth, 2014, 卷号: 407, 页码: 37-41 Huang, Jianliang; Ma, Wenquan; Wei, Yang; Zhang, Yanhua; Cui, Kai; Shao, Jun 收藏  |  浏览/下载：23/0  |  提交时间：2015/03/16 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文  OAI收割 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li 收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文  OAI收割 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong 收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文  OAI收割 ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761 Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong 收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27 Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文  OAI收割 zhang, yanhua1 ; ma, wenquan1 ; wei, yang1 ; cao, yulian1 ; huang, jianliang1 ; cui, kai1 ; guo, xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511 Zhang, Yanhua; Ma, Wenquan; Wei, Yang; Cao, Yulian; Huang, Jianliang; Cui, Kai; Guo, Xiaolu 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/19 Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2012, 卷号: 45, 页码: 173-176 Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 562 Wei W (Wei, Wei); Qin ZX (Qin, Zhixin); Fan SF (Fan, Shunfei); Li ZW (Li, Zhiwei); Shi K (Shi, Kai); Zhu QS (Zhu, Qinsheng); Zhang GY (Zhang, Guoyi) 收藏  |  浏览/下载：43/0  |  提交时间：2013/04/18 High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control 期刊论文  OAI收割 ieee journal of quantum electronics, 2012, 卷号: 48, 期号: 4, 页码: 512-515 Wei, Yang; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Cao, Yulian; Cui, Kai 收藏  |  浏览/下载：8/0  |  提交时间：2013/04/19