机构

• 半导体研究所 [77]

采集方式

• OAI收割 [77]

内容类型

• 期刊论文 [74]
• 会议论文 [3]

发表日期

• 2014 [8]
• 2013 [1]
• 2012 [11]
• 2011 [8]
• 2010 [17]
• 2009 [6]
• 更多

学科主题

• 光电子学 [77]

筛选

浏览/检索结果: 共77条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of vacuum science & technology b, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 2014, 卷号: 32, 32, 期号: 5, 页码: 051207, 051207 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P   |  收藏  |   Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 2, 页码: 028503, 028503 作者:  Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |   Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors 期刊论文  OAI收割 journal of vacuum science & technology b, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 2014, 卷号: 32, 32, 期号: 3, 页码: 031204, 031204 作者:  Li, XJ;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |   Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文  OAI收割 optics express, OPTICS EXPRESS, 2014, 2014, 卷号: 22, 22, 期号: 10, 页码: 11392-11398, 11392-11398 作者:  Le, LC;  Zhao, DG;  Jiang, DS;  Yang, H;  Chen, P   |  收藏  |   Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 115, 115, 期号: 16, 页码: 163704, 163704 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Yang, H   |  收藏  |   Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文  OAI收割 chinese physics b, CHINESE PHYSICS B, 2014, 2014, 卷号: 23, 23, 期号: 6, 页码: 068801, 068801 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |   Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文  OAI收割 chinese science bulletin, CHINESE SCIENCE BULLETIN, 2014, 2014, 卷号: 59, 59, 期号: 16, 页码: 1903-1906, 1903-1906 作者:  Zeng, C;  Zhang, SM;  Liu, JP;  Li, DY;  Jiang, DS   |  收藏  |   Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2014, 2014, 卷号: 564, 564, 页码: 135-139, 135-139 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Chen, P   |  收藏  |   A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe 期刊论文  OAI收割 chinese physics letters, CHINESE PHYSICS LETTERS, 2013, 2013, 卷号: 30, 30, 期号: 10, 页码: 104205, 104205 作者:  Chen, P;  Zhao, DG;  Feng, MX   |  收藏  |   Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文  OAI收割 science china-physics mechanics & astronomy, 2012, 卷号: 55, 期号: 4, 页码: 619-624 Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H 收藏  |