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• 长春光学精密机械与... [16]

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• 会议论文 [7]

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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文  OAI收割 Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200 作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin   |  收藏  |  浏览/下载：26/0  |  提交时间：2020/08/24 Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science   High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 3 作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang   |  收藏  |  浏览/下载：18/0  |  提交时间：2020/08/24 Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors   Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy 期刊论文  OAI收割 Journal of Applied Physics, 2019, 卷号: 125, 期号: 10, 页码: 7 作者:  J.P.Li;  G.Q.Miao;  Z.W.Zhang;  X.Li;  H.Song   |  收藏  |  浏览/下载：57/0  |  提交时间：2020/08/24 quantum-wells,discontinuity,offsets,heterostructures,edge,Physics   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文  OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu   |  收藏  |  浏览/下载：19/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio 期刊论文  OAI收割 Optik, 2019, 卷号: 182, 页码: 139-143 作者:  Y.B.Li;  Y.W.Huang;  Y.Q.Ning;  L.J.Wang   |  收藏  |  浏览/下载：23/0  |  提交时间：2020/08/24 Spatial light modulator (SLM),Asymmetric Fabry-Perot cavity,Multiple-quantum wells,Electro-optical device,Optical communication,electroabsorption modulators   An effective approach to alleviating the thermal effect in microstripe array-LEDs via the piezo-phototronic effect 期刊论文  OAI收割 Materials Horizons, 2018, 卷号: 5, 期号: 1, 页码: 116-122 作者:  Du, C. H.;  Jing, L.;  Jiang, C. Y.;  Liu, T.;  Pu, X.   |  收藏  |  浏览/下载：10/0  |  提交时间：2019/09/17 light-emitting-diodes  quantum-wells  power  performance  compensation  efficiency  droop  Chemistry  Materials Science   Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文  OAI收割 ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704 作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian   |  收藏  |  浏览/下载：13/0  |  提交时间：2019/09/17 Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion   Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文  OAI收割 Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5 作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang   |  收藏  |  浏览/下载：14/0  |  提交时间：2019/09/17 Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells   Effect of V-Pits on the Property of GaN Epilayer Grown by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7527-7531 作者:  Fu, Y. H.;  Sun, X. J.;  Ben, J. W.;  Jiang, K.;  Jia, Y. P.   |  收藏  |  浏览/下载：9/0  |  提交时间：2019/09/17 GaN  MOCVD  Defects  V-Pits  raman-scattering  quantum-wells  nitrides  Chemistry  Science & Technology - Other Topics  Materials Science  Physics   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.