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浏览/检索结果: 共32条，第1-10条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers 会议论文  OAI收割 APR 11-12, 2016 作者:  Sun, Yiling;  Ye, Jichun;  Gao, Pingqi;  Xiang, Yong   |  收藏  |  浏览/下载：8/0  |  提交时间：2021/12/02 CHEMICAL-VAPOR-DEPOSITION  SILICON-NITRIDE FILMS  TEMPERATURE   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   A density functional study of zinc oxide elastic properties under high pressure 会议论文  OAI收割 Beijing, China, August 8, 2010 - August 12, 2010 作者:  Wang BB;  Zhao YP(赵亚溥)   |  收藏  |  浏览/下载：26/0  |  提交时间：2018/11/08 Biosensors  Blending  Chemical vapor deposition  Crystal symmetry  Crystals  Density functional theory  Elastic constants  Elasticity  II  VI semiconductors  Lattice constants  Local density approximation  Nanocomposites  Nanostructured materials  Zinc sulfide  Chemical vapor depositions (CVD)  Density  functional study  Elastic properties  Environment pressure  Generalized gradient approximations  Longitudinal direction  Multi  scale simulation  Zinc blend structure   Wafer level approaches for the integration of carbon nanotubes in electronic and sensor applications 会议论文  OAI收割 9th International Multi-Conference on Systems, Signals and Devices, SSD 2012, Chemnitz, Germany, March 20-23, 2012 作者:  Hermann, Sascha;  Fiedler, Holge;  Yu HB(于海波);  Loschek, Serge;  Bonitz, Jens 收藏  |  浏览/下载：11/0  |  提交时间：2012/10/24 Chemical vapor deposition  Optical interconnects  Sensors   Effect of O-2 flow rate on the morphological and optical properties of ZnO nanocrystals 会议论文  OAI收割 2nd International Conference on Chemical Engineering and Advanced Materials (CEAM 2012), Guangzhou, PEOPLES R CHINA, JUL 13-15, 2012 Tian, H. J.; Xu, J. B.; Tian, Y. J.; Wen, H. 收藏  |  浏览/下载：11/0  |  提交时间：2014/08/28 ZnO nanocrystal  Chemical vapor deposition  Morphological evolution  Computational fluid dynamics  VAPOR-DEPOSITION  CONTROLLED GROWTH  NANOSTRUCTURES  PHOTOLUMINESCENCE  ARRAYS  NANOWIRES  FILMS  TEMPERATURE  TRANSPORT   ZnO films growth at different temperature on the substrate of Corning glass by MOCVD (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Zhao J.;  Gao X.;  Wang C.;  Tang W. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46  indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM). (2010) Trans Tech Publications.   Growth of ZnO films under different oxygen partial pressures by metal organic chemical vapour deposition (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Gao X.;  Zhao J.;  Tang W.;  Wang C. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 ZnO films were grown under different oxygen partial pressures by metal organic chemical vapor deposition on the substrates of Corning glass. We investigated the quality of the films by SIEMENS D8 X-ray diffractometer. The surface morphology of the films were observed by Digital Nanoscope IIIa AFM with normal silicon nitride tip in the contact mode. The hall effect measurements were carried out with indium ohmic contact. The transmission spectrum of the films were measured. The transmission ratio is larger than 80% in the region above the wavelength of 385nm  and sharply decreased under 10% below the wavelength of 375 nm. (2010) Trans Tech Publications.   ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文  OAI收割 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1  2  3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50  indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.   Tri-metallic catalyst for mass production of quasi-aligned carbon nanotubes by thermal chemical vapor deposition 会议论文  OAI收割 5th China International Conference on High-Performance Ceramics (CICC-5), Changsha, PEOPLES R CHINA, MAY 10-13, 2007 作者:  Cui, Y. B.;  Zhan, S. L.;  Wu, X. F.;  Gong, G. Z.;  Tian, Y. J. 收藏  |  浏览/下载：11/0  |  提交时间：2014/08/28 carbon nanotubes  chemical vapor deposition  tri-metallic catalyst   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.