机构

• 半导体研究所 [6]

采集方式

• OAI收割 [6]

内容类型

• 会议论文 [6]

发表日期

• 2008 [6]

学科主题

• 光电子学 [6]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 存缴方式：oaiharvest    发表日期：2008    学科主题：光电子学    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：134/0  |  提交时间：2010/03/09 GaN  MOCVD  LED  nano-pattern  SEM  HRXRD  PL   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, XC; Zhao, YW; Dong, ZY; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09 zinc oxide  X-ray diffraction  defects  single crystal   Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 zinc oxide  defect  vacancy   Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Li, Y; Yi, XY; Wang, XD; Guo, JX; Wang, LC; Wang, GH; Yang, FH; Zeng, YP; Li, JM 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09 GaN  LED  plasma  damage  etch  ICP  PECVD   The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 HVPE  GaN  nitridation  polarity  etching