机构

• 半导体研究所 [15]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [10]
• 会议论文 [5]

发表日期

• 2008 [15]

学科主题

• 半导体物理 [7]
• 半导体材料 [4]
• 光电子学 [3]
• 微电子学 [1]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    发表日期：2008    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1258-1262 作者:  Yang Xiaoli;  Wang Yu 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/23 Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 16, 页码: art. no. 165004 Sun, LL; Yan, FW; Gao, HY; Zhang, HX; Zeng, YP; Wang, GH; Li, JM 收藏  |  浏览/下载：48/0  |  提交时间：2010/03/08 P-TYPE GAN  SAPPHIRE  PROPERTY   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Spectroscopy of long wavelength coupled quantum dots 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 17, 页码: art. no. 175102 Xiong, YH; Huang, SS; Ni, HQ; Dou, XM; Niu, ZC 收藏  |  浏览/下载：84/1  |  提交时间：2010/03/08 ELECTRON-SPIN  EMISSION  ISLANDS  GROWTH  STATES   Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy 期刊论文  OAI收割 japanese journal of applied physics, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 part 1 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Yang, JK; Zeng, YP 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08 HVPE  GaN  sapphire  nonpolar  semipolar   Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272 Zhao, YM; Sun, GS; Ning, J; Liu, XF; Zhao, WS; Wang, L; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713 Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM 收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08 GaN  Si(111)  Crack  AlN  MOCVD