机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [9]
• 会议论文 [1]

发表日期

• 2010 [10]

学科主题

• 光电子学 [3]
• 半导体材料 [3]
• 半导体化学 [1]
• 半导体器件 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 存缴方式：oaiharvest    发表日期：2010    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文  OAI收割 6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007 Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09 InAs Quantum Dots   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo) 收藏  |  浏览/下载：158/17  |  提交时间：2010/07/05 ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  VAPOR-PHASE EPITAXY  N-TYPE ZNTE  MBE GROWTH  100 GAAS  ZNSE  LAYERS  SURFACE  TEMPERATURE  SUBSTRATE  EPILAYERS   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials   Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316 Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/04 MOCVD  DBR  high-reflectivity  nitride  SURFACE-EMITTING LASER   Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor 期刊论文  OAI收割 journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7103-7107 Qi QO (Qi Qiong); Yu AF (Yu Aifang); Wang LM (Wang Liangmin); Jiang C (Jiang Chao) 收藏  |  浏览/下载：28/0  |  提交时间：2010/11/30 Organic Field-Effect Transistor  Dielectric Surface Energy  Initial Nucleation  Mobility  Grain Size   Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文  OAI收割 materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033 Sun LL (Sun Lili); Liu C (Liu Chao); Li JM (Li Jianming); Wang JX (Wang Junxi); Yan FW (Yan Fawang); Zeng YP (Zeng Yiping); Li JM (Li Jinmin) 收藏  |  浏览/下载：225/60  |  提交时间：2010/05/07 Magnetic materials  Semiconductors  Ion implantation   Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文  OAI收割 journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132 Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui) 收藏  |  浏览/下载：513/2  |  提交时间：2010/08/17 InN  Burstein-Moss effect  Quantum confinement effect  Activation energy  FUNDAMENTAL-BAND GAP  WELL STRUCTURES  EMISSION  SINGLE   Ferromagnetic properties in Fe-doped ZnS thin films 期刊论文  OAI收割 optoelectronics and advanced materials-rapid communications, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 2010, 卷号: 4, 4, 期号: 12, 页码: 2072-2075, 2072-2075 作者:  Zhu F;  Dong S;  Yang GD;  Zhu, F, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhufeng@semi.ac.cn   |  收藏  |  浏览/下载：38/1  |  提交时间：2011/07/06 Fe-doped ZnS  First principles calculation  Ferromagnetic properties  High Curie temperature  OPTICAL-PROPERTIES  SEMICONDUCTORS  Fe-doped Zns  First Principles Calculation  Ferromagnetic Properties  High Curie Temperature  Optical-properties  Semiconductors   Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文  OAI收割 journal of the electrochemical society, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 2010, 卷号: 157, 157, 期号: 7, 页码: h721-h726, H721-H726 作者:  Wei TB (Wei T. B.);  Hu Q (Hu Q.);  Duan RF (Duan R. F.);  Wei XC (Wei X. C.);  Yang JK (Yang J. K.)   |  收藏  |  浏览/下载：292/52  |  提交时间：2010/06/18 atomic force microscopy  Atomic Force Microscopy