中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [15]
采集方式
OAI收割 [15]
内容类型
期刊论文 [14]
会议论文 [1]
发表日期
2016 [1]
2011 [2]
2008 [2]
2006 [4]
2003 [2]
2001 [3]
更多
学科主题
半导体物理 [15]
光电子学 [1]
半导体器件 [1]
半导体材料 [1]
筛选
浏览/检索结果:
共15条,第1-10条
帮助
限定条件
存缴方式:oaiharvest
学科主题:半导体物理
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
GaN-based violet lasers grown on sapphire with a novel facet fabrication method
会议论文
OAI收割
solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015
Yingdong Tian
;
Yun Zhang
;
Jianchang Yan
;
Xiang Chen
;
Yanan Guo
;
Xuecheng Wei
;
Junxi Wang
;
Jinmin Li
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2016/06/02
Preparation and photoluminescence study of patterned substrate quantum wires
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 2, 页码: article no.20703, Article no.20703
作者:
Wang XP
;
Yang XH
;
Han Q
;
Ju YL
;
Du Y
  |  
收藏
  |  
浏览/下载:57/7
  |  
提交时间:2011/07/05
V-groove substrate
quantum wires
GaAs
EPITAXIAL-GROWTH
TRANSISTOR
V-groove Substrate
Quantum Wires
Gaas
Epitaxial-growth
Transistor
Photoluminescence of CdSe nanowires grown with and without metal catalyst
期刊论文
OAI收割
nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359
作者:
Fasoli A
;
Colli A
;
Martelli F
;
Pisana S
;
Tan PH
  |  
收藏
  |  
浏览/下载:52/5
  |  
提交时间:2011/07/05
CdSe
nanowires
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
SHAPE-SELECTIVE SYNTHESIS
LIQUID-SOLID MECHANISM
OPTICAL-PROPERTIES
SILICON NANOWIRES
SI NANOWIRES
ZNSE NANOWIRES
SEMICONDUCTOR NANOCRYSTALS
STRUCTURAL-PROPERTIES
EPITAXIAL-GROWTH
Cdse
Nanowires
Photoluminescence
Chemical-vapor-deposition
Shape-selective Synthesis
Liquid-solid Mechanism
Optical-properties
Silicon Nanowires
Si Nanowires
Znse Nanowires
Semiconductor Nanocrystals
Structural-properties
Epitaxial-growth
Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 193301
作者:
Li JB
收藏
  |  
浏览/下载:209/43
  |  
提交时间:2010/03/08
density functional theory
energy gap
enthalpy
gallium compounds
ground states
III-V semiconductors
indium compounds
Monte Carlo methods
nanowires
semiconductor quantum wires
wide band gap semiconductors
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
OAI收割
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Deep level transient spectroscopy studies of Er and Pr implanted GaN films
期刊论文
OAI收割
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF
;
Chen WD
;
Xu ZJ
;
Xu XR
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/04/11
GaN
Er
Pr-implautation
deep level transient spectroscopy
N-TYPE GAN
DEFECTS
EPITAXY
TRAPS
InN nanoflowers grown by metal organic chemical vapor deposition
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 89, 期号: 7, 页码: art.no.071113
Kang TT (Kang Ting-Ting)
;
Liu X (Liu Xianglin)
;
Zhang RQ (Zhang Ri Q.)
;
Hu WG (Hu Wei G.)
;
Cong G (Cong Guangwei)
;
Zhao FA (Zhao Feng-Ai)
;
Zhu Q (Zhu Qinsheng)
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
CRYSTAL-GROWTH
NITRIDE
NANOWIRES
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
期刊论文
OAI收割
thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/04/11
time-resolved photoluminescence
InAs self-assembled QDs
migration of carriers
1.3 MU-M
DEPENDENT RADIATIVE DECAY
THERMAL REDISTRIBUTION
EXCITONS
RECOMBINATION
RELAXATION
LIFETIMES
EMISSION
EPITAXY
LASERS
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD
期刊论文
OAI收割
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:
Liang S
;
Pan JQ
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
self-assembled quantum dots
indium arsenide
bimodal size distribution
MOCVD
CHEMICAL-VAPOR-DEPOSITION
MU-M
ISLANDS
DENSITY
EPITAXY
LASER
Size evolution and optical properties of self-assembled InAs quantum dots on different matrix
期刊论文
OAI收割
physica e-low-dimensional systems & nanostructures, 2003, 卷号: 19, 期号: 3, 页码: 292-297
作者:
Xu B
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
self-assembled
MBE
quantum dots
photoluminescence
1.3 MU-M
TEMPERATURE-DEPENDENCE
EXCITED-STATES
INXGA1-XAS
LASERS
INP