机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [10]

发表日期

• 2007 [10]

学科主题

• 半导体材料 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2007    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 2DEG   MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 2DEG   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Simulation of In0.65Ga0.35N single-junction solar cell 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7335-7338 Zhang, X; Wang, X; Xiao, H; Yang, C; Ran, J; Wang, C; Hou, Q; Li, J 收藏  |  浏览/下载：139/1  |  提交时间：2010/03/08 BAND-GAP  INN   Low threshold current density operation of strain-compensated quantum cascade laser 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 3, 页码: 717-720 作者:  Li L 收藏  |  浏览/下载：77/0  |  提交时间：2010/03/29 MU-M   InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475 Gao FB (Gao Fubao); Chen NF (Chen NuoFu); Liu L (Liu Lei); Zhang XW (Zhang X. W.); Wu JL (Wu Jinliang); Yin ZG (Yin Zhigang) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 crystal structure   Structure optimization of field-plate AlGaN/GaN HEMTs 期刊论文  OAI收割 microelectronics journal, 2007, 卷号: 38, 期号: 2, 页码: 272-274 Luo WJ (Luo Weijun); Wei K (Wei Ke); Chen XJ (Chen Xiaojuan); Li CZ (Li Chengzhan); Liu XY (Liu Xinyu); Wang XL (Wang Xiaoliang) 收藏  |  浏览/下载：135/0  |  提交时间：2010/03/29 GaN   Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885 作者:  Wei TB;  Duan RF 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29 VAPOR-PHASE EPITAXY   High-power operation of uncoated strain-compensated quantum cascade lasers at 4.8 mu m 期刊论文  OAI收割 chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3428-3430 Li, L; Shao, Y; Liu, JQ; Liu, FQ; Wang, ZG 收藏  |  浏览/下载：39/7  |  提交时间：2010/03/08 CONTINUOUS-WAVE OPERATION  ROOM-TEMPERATURE   Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866 Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG 收藏  |  浏览/下载：64/5  |  提交时间：2010/03/08 III-V semiconductors  quantum dots  scanning electron microscopy  selective etching