中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 半导体研究所 [41]
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发表日期
  • 2011 [41]
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浏览/检索结果: 共41条,第1-10条 帮助

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A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure 期刊论文  iSwitch采集
Ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
作者:  
Liu, Guipeng;  Wu, Ju;  Lu, Yanwu;  Zhang, Biao;  Li, Chengming
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
Air stable, photosensitive, phase pure iron pyrite nanocrystal thin films for photovoltaic application 期刊论文  iSwitch采集
Nano letters, 2011, 卷号: 11, 期号: 11, 页码: 4953-4957
作者:  
Bi, Yu;  Yuan, Yongbo;  Exstrom, Christopher L.;  Darveau, Scott A.;  Huang, Jinsong
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Elastic, electronic, and optical properties of two-dimensional graphyne sheet 期刊论文  iSwitch采集
Journal of physical chemistry c, 2011, 卷号: 115, 期号: 42, 页码: 20466-20470
作者:  
Kang, Jun;  Li, Jingbo;  Wu, Fengmin;  Li, Shu-Shen;  Xia, Jian-Bai
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Intrinsic zno films fabricated by dc sputtering from oxygen-deficient targets for cu(in,ga)se-2 solar cell application 期刊论文  iSwitch采集
Chinese optics letters, 2011, 卷号: 9, 期号: 10, 页码: 4
作者:  
Yang, Chongyin;  Wan, Dongyun;  Wang, Zhou;  Huang, Fuqiang
收藏  |  浏览/下载:25/0  |  提交时间:2019/05/12
Low temperature characteristics of algan/gan high electron mobility transistors 期刊论文  iSwitch采集
European physical journal-applied physics, 2011, 卷号: 56, 期号: 1, 页码: 4
作者:  
Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Qiang, L. J.
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12
Quantum-dot-induced optical transition enhancement in inas quantum-dot-embedded p-i-n gaas solar cells 期刊论文  iSwitch采集
Applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 3
作者:  
Shang, X. -J.;  He, J. -F.;  Li, M. -F.;  Zhan, F.;  Ni, H. -Q.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
The transport mechanism of gate leakage current in algan/gan high electron mobility transistors 期刊论文  iSwitch采集
European physical journal-applied physics, 2011, 卷号: 55, 期号: 3, 页码: 5
作者:  
Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Jiang, L. J.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Native p-type transparent conductive cui via intrinsic defects 期刊论文  iSwitch采集
Journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 5
作者:  
Wang, Jing;  Li, Jingbo;  Li, Shu-Shen
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in algaas/gaas modulation-doped heterostructures 期刊论文  iSwitch采集
Journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 5
作者:  
Liu, Guipeng;  Wu, Ju;  Lu, Yanwu;  Li, Zhiwei;  Song, Yafeng
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
Effect of built-in electric field in photovoltaic inas quantum dot embedded gaas solar cell 期刊论文  iSwitch采集
Applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:  
Shang, X. J.;  He, J. F.;  Wang, H. L.;  Li, M. F.;  Zhu, Y.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12