机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [11]

发表日期

• 2012 [11]

学科主题

• 半导体材料 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2012    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Theoretical study of the effects of InAs/GaAs quantum dot layer 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu, Yong-Xian; Yang, Xiao-Guang; Ji, Hai-Ming; Xu, Peng-Fei; Yang, Tao 收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07 The Effect of Double-Pass Gain on the Performances of a Quantum-Dot Superluminescent Diode Integrated With a Semiconductor Optical Amplifier 期刊论文  OAI收割 journal of lightwave technology, 2012, 卷号: 30, 期号: 16 An, Qi; Jin, Peng; Wang, Zuocai; Li, Xinkun; Wang, Zhanguo 收藏  |  浏览/下载：15/0  |  提交时间：2013/10/10 Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 期刊论文  OAI收割 optics express, 2012, 卷号: 20, 期号: 11, 页码: 11936-11943 Li, XK; Jin, P; An, Q; Wang, ZC; Lv, XQ; Wei, H; Wu, J; Wu, J; Wang, ZG 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/17 Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers 期刊论文  OAI收割 optics letters, 2012, 卷号: 37, 期号: 8, 页码: 1298-1300 Xu, PF; Ji, HM; Xiao, JL; Gu, YX; Huang, YZ; Yang, T 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17 InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 2, 页码: 028102 Li, Xin-Kun; Liang, De-Chun; Jin, Peng; An, Qi; Wei, Heng; Wu, Jian; Wang, Zhan-Guo 收藏  |  浏览/下载：10/0  |  提交时间：2013/04/19 Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 Improved Continuous-Wave Performance of Two-Section Quantum-Dot Superluminescent Diodes by Using Epi-Down Mounting Process 期刊论文  OAI收割 ieee photonics technology letters, 2012, 卷号: 24, 期号: 14, 页码: 1188-1190 Li, XK; Jin, P; An, Q; Wang, ZC; Lv, XQ; Wei, H; Wu, J; Wu, J; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/17 Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2012, 卷号: 45, 页码: 173-176 Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文  OAI收割 optics letters, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073 Cao YL (Cao, Yulian); Ji HM (Ji, Haiming); Xu PF (Xu, Pengfei); Gu YX (Gu, Yongxian); Ma WQ (Ma, Wenquan); Yang T (Yang, Tao) 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/27 InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 2, 页码: 28102 Li, XK; Liang, DC; Jin, P; An, Q; Wei, H; Wu, J; Wang, ZG 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/17