机构

• 半导体研究所 [48]

采集方式

• OAI收割 [48]

内容类型

• 期刊论文 [40]
• 会议论文 [8]

发表日期

• 2017 [1]
• 2013 [1]
• 2011 [3]
• 2010 [3]
• 2009 [1]
• 2008 [2]
• 更多

学科主题

• 光电子学 [48]

筛选

浏览/检索结果: 共48条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文  OAI收割 Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135 作者:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi 收藏  |  浏览/下载：30/0  |  提交时间：2018/07/11 Measurement of Linewidth Enhancement Factor for 1.3-μm InAs/GaAs Quantum Dot Lasers 期刊论文  OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 2013, 卷号: 25, 25, 期号: 5, 页码: 488, 488 作者:  Jin-Long Xiao, Chu-Cai Guo, Hai-Ming Ji, Peng-Fei Xu, Qi-Feng Yao, Xiao-Meng Lv, Ling-Xiu Zou,Heng Long, Tao Yang, and Yong-Zhen Huang   |  收藏  |  浏览/下载：10/0  |  提交时间：2014/04/08 Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays 期刊论文  OAI收割 applied physics express, 2011, 卷号: 4, 期号: 4, 页码: article no.45001 Liu JQ; Wang JF; Gong XJ; Huang J; Xu K; Zhou TF; Zhong HJ; Qiu YX; Cai DM; Ren GQ; Yang H 收藏  |  浏览/下载：71/3  |  提交时间：2011/07/05 OUTPUT VOLTAGE  NANOWIRES  NANOGENERATORS  GROWTH   A new method to measure the carrier concentration of p-GaN 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804 Zhou M; Zhao DG 收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05 p-GaN  carrier concentration measurement  ultraviolet photodetector  LASER-DIODES  FILMS   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Lineshape Analysis of the Beat Signal Between Optical Carrier and Delayed Sidebands 期刊论文  OAI收割 ieee journal of quantum electronics, 2010, 卷号: 46, 期号: 3, 页码: 347-353 Zhu NH (Zhu Ning Hua); Man JW (Man Jiang Wei); Zhang HG (Zhang Hong Guang); Ke JH (Ke Jian Hong); Han W (Han Wei); Chen W (Chen Wei); Liu Y (Liu Yu); Wang X (Wang Xin); Yuan HQ (Yuan Hai Qing); Xie L (Xie Liang) 收藏  |  浏览/下载：100/3  |  提交时间：2010/04/13 Coherence  heterodyne technique  intensity modulation  optical spectrum  lineshape  linewidth  SELF-HETERODYNE INTERFEROMETER  LASER LINEWIDTH MEASUREMENT  SURFACE-EMITTING LASER  SEMICONDUCTOR-LASER  MODULATION  DIODES   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS   Ferromagnetic modification of GaN film by Cu+ ions implantation 期刊论文  OAI收割 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2010, 卷号: 268, 期号: 2, 页码: 123-126 作者:  Zhao DG 收藏  |  浏览/下载：100/5  |  提交时间：2010/04/22 Nonmagnetic element doped semiconductor  Cu ion implantation  GaN-based DMS  PIXE ANALYSIS  DOPED ZNO  MN  CR   Study on Frequency Coherence Properties of Light Beams 期刊论文  OAI收割 ieee journal of quantum electronics, 2009, 卷号: 45, 期号: 5-6, 页码: 514-522 作者:  Ke JH;  Wang LX 收藏  |  浏览/下载：48/0  |  提交时间：2010/03/08 Coherence  Fabry-Perot (FP) laser  heterodyne technique  intensity modulation  linewidth   Characterization of parasitics from scattering parameters of laser diode 期刊论文  OAI收割 microwave and optical technology letters, 2008, 卷号: 50, 期号: 1, 页码: 1-4 Zhang, SJ; Zhu, NH; Liu, Y; Liu, YZ 收藏  |  浏览/下载：54/2  |  提交时间：2010/03/08 semiconductor lasers  parasitic network  parasitics  scattering parameters