机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 会议论文 [7]

发表日期

• 2006 [1]
• 2004 [1]
• 2003 [1]
• 2002 [1]
• 2001 [1]
• 2000 [1]
• 更多

学科主题

• 半导体材料 [7]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 会议论文  OAI收割 21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005 Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo) 收藏  |  浏览/下载：520/27  |  提交时间：2010/03/29 silicon   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：82/12  |  提交时间：2010/03/29 1.3 MU-M   High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES   Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文  OAI收割 conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002 Chen WD; Wang YQ; Chen CY; Diao HW; Liao XB; Kong GL; Hsu CC 收藏  |  浏览/下载：8/0  |  提交时间：2010/10/29 PHOTOLUMINESCENCE  LUMINESCENCE  SPECTROSCOPY  DEPOSITION   Epitaxial growth of SiC on complex substrates 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS   Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文  OAI收割 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W 收藏  |  浏览/下载：25/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  COHERENT ISLANDS  GAAS  GROWTH  DOTS  DISLOCATIONS  TEMPERATURE  MECHANISMS  SI(001)  INGAAS