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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [15]
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OAI收割 [15]
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期刊论文 [13]
会议论文 [2]
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2010 [1]
2006 [1]
2005 [2]
2003 [2]
2002 [1]
2001 [2]
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学科主题
半导体材料 [15]
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学科主题:半导体材料
专题:半导体研究所
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Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
期刊论文
OAI收割
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B
;
Zhang Z
;
Zhang R
;
Fu DY
;
Xie ZL
;
Lu H
;
Schaff WJ
;
Song LH
;
Cui YC
;
Hua XM
;
Han P
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:196/52
  |  
提交时间:2010/04/28
BAND-GAP
TEMPERATURE-DEPENDENCE
ENERGY
SEMICONDUCTORS
SPECTRA
EPITAXY
GROWTH
LAYERS
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
期刊论文
OAI收割
solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:100/0
  |  
提交时间:2010/04/11
nanostructures
semiconductors
optical properties
luminescence
WAVELENGTH
NANOSTRUCTURES
INTERBAND
LASERS
Raman scattering from GaP nanowires
期刊论文
OAI收割
european physical journal b, 2005, 卷号: 46, 期号: 4, 页码: 507-513
de la Chapelle, ML
;
Han, HX
;
Tang, CC
收藏
  |  
浏览/下载:92/19
  |  
提交时间:2010/03/17
GALLIUM-PHOSPHIDE NANOWIRES
Influence of exotic Mn on magnetic properties of YCo5.0-xMnxGa7.0 (0.05 <= x <= 3.0)
期刊论文
OAI收割
applied physics a-materials science & processing, 2005, 卷号: 81, 期号: 6, 页码: 1309-1312
Chang H
;
Rao G
;
Liang J
;
Guo Y
;
Liu S
;
Du H
收藏
  |  
浏览/下载:116/25
  |  
提交时间:2010/03/17
LU SINGLE-CRYSTALS
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
OAI收割
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs
期刊论文
OAI收割
journal of crystal growth, 2002, 卷号: 243, 期号: 2, 页码: 261-266
作者:
Jiang DS
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
photoluminescence
molecular beam epitaxy
quantum wells
III-V semiconductors
MOLECULAR-BEAM EPITAXY
SINGLE-QUANTUM-WELL
LUMINESCENCE
GAAS
LOCALIZATION
BEHAVIOR
LAYER
Hydrogen behavior in GaN epilayers grown by NH3-MBE
期刊论文
OAI收割
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:99/8
  |  
提交时间:2010/08/12
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
期刊论文
OAI收割
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 791-794
Zhuang QD
;
Li JM
;
Wang XX
;
Zeng YP
;
Wang YT
;
Wang BQ
;
Pan L
;
Wu J
;
Kong MY
;
Lin LY
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/08/12
InGaAs/GaAs
quantum dots
superlattice
annealing
X-ray
MOLECULAR-BEAM EPITAXY
INFRARED PHOTODETECTORS
STRAIN RELAXATION
LUMINESCENCE
HETEROSTRUCTURES
DEPENDENCE
ABSORPTION
THRESHOLD
OPERATION
ISLANDS