机构

• 半导体研究所 [28]

采集方式

• OAI收割 [28]

内容类型

• 期刊论文 [27]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2008 [3]
• 2006 [4]
• 2005 [1]
• 更多

学科主题

• 半导体物理 [28]

筛选

浏览/检索结果: 共28条，第1-10条 帮助 限定条件 学科主题：半导体物理    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文  OAI收割 nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359 作者:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH   |  收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05 CdSe  nanowires  photoluminescence  CHEMICAL-VAPOR-DEPOSITION  SHAPE-SELECTIVE SYNTHESIS  LIQUID-SOLID MECHANISM  OPTICAL-PROPERTIES  SILICON NANOWIRES  SI NANOWIRES  ZNSE NANOWIRES  SEMICONDUCTOR NANOCRYSTALS  STRUCTURAL-PROPERTIES  EPITAXIAL-GROWTH  Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth   Defects in gallium nitride nanowires: First principles calculations 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305 作者:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：105/1  |  提交时间：2010/10/11 CHEMICAL-VAPOR-DEPOSITION  Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  GAN NANOWIRES  NATIVE DEFECTS  COMPLEXES  EPITAXY  GROWTH  ARRAYS   Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505 作者:  Chen L;  Qian X 收藏  |  浏览/下载：84/39  |  提交时间：2010/03/08 annealing   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文  OAI收割 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Long-wavelength light emission from self-assembled heterojunction quantum dots 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 103, 期号: 9, 页码: art. no. 094315 Zhou, ZQ; Xu, YQ; Hao, RT; Tang, B; Ren, ZW; Niu, ZC 收藏  |  浏览/下载：43/4  |  提交时间：2010/03/08 MU-M  GAAS  GROWTH  EPITAXY   Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP 收藏  |  浏览/下载：51/4  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  NANORODS  MECHANISM  NANOWIRES   Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 GaN  Er  Pr-implautation  deep level transient spectroscopy  N-TYPE GAN  DEFECTS  EPITAXY  TRAPS   As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704 Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Yang F (Yang Fei); Peng CT (Peng Changtao); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 RAY-PHOTOELECTRON-SPECTROSCOPY  INAS SURFACES  FABRICATION  DEPOSITION  LAYERS  OXIDE   Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582 Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  ORIGIN   Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文  OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145 Gong Z; Niu ZC; Fang ZD 收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  QUANTUM-DOT SUPERLATTICES  VICINAL GAAS(001)  GAAS  WIRES  POLARIZATION  GROWTH  WELLS  TEMPERATURE  MECHANISM