机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [13]
• 会议论文 [1]

发表日期

• 2011 [2]
• 2010 [2]
• 2009 [3]
• 2008 [4]
• 2002 [1]
• 2001 [1]
• 更多

学科主题

• 半导体物理 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain 期刊论文  OAI收割 journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY, 2011, 2011, 卷号: 42, 42, 期号: 6, 页码: 1388-1391, 1388-1391 作者:  Zhang, J;  Tan, PH;  Zhao, WJ;  Lu, J;  Zhao, JH   |  收藏  |  浏览/下载：22/0  |  提交时间：2012/01/06 Raman spectroscopy  ultrathin Fe(3)O(4) film  crystal orientation  strain  phonon strain-shift coefficient  PULSED-LASER DEPOSITION  THIN-FILMS  SPIN-TRANSPORT  MAGNETITE  SEMICONDUCTORS  SPINTRONICS  SCATTERING  CORROSION  DEVICES  GROWTH  Raman Spectroscopy  Ultrathin Fe(3)o(4) Film  Crystal Orientation  Strain  Phonon Strain-shift Coefficient  Pulsed-laser Deposition  Thin-films  Spin-transport  Magnetite  Semiconductors  Spintronics  Scattering  Corrosion  Devices  Growth   Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文  OAI收割 physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 2011, 卷号: 208, 208, 期号: 4, 页码: 843-850, 843-850 作者:  Zhu BL;  Zhu SJ;  Zhao XZ;  Su FH;  Li GH   |  收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE  Conductivity  Doping  Photoluminescence  Pulsed Laser Deposition  Zno  Zinc-oxide  Electrical-properties  Optical-properties  Oxygen-pressure  Photoluminescence  Luminescence  Violet  Growth  Fabrication  Dependence   STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS 期刊论文  OAI收割 journal of infrared and millimeter waves, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 2010, 卷号: 29, 29, 期号: 2, 页码: 87-, 87- 作者:  Yang W (Yang Wei);  Luo HH (Luo Hai-Hui);  Qian X (Qian Xuan);  Ji Y (Ji Yang);  Yang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: jiyang@semi.ac.cn   |  收藏  |  浏览/下载：77/0  |  提交时间：2010/05/24 microwave  Microwave  Reflectance  Two-dimensional Electron Gas(2deg)  Cyclotron Resonance  Quantum-wells  Gaas/algaas Heterostructures  Germanium  Silicon  reflectance  two-dimensional electron gas(2DEG)  cyclotron resonance  QUANTUM-WELLS  GAAS/ALGAAS HETEROSTRUCTURES  GERMANIUM  SILICON   Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films 期刊论文  OAI收割 journal of magnetism and magnetic materials, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 2010, 卷号: 322, 322, 期号: 21, 页码: 3250-3254, 3250-3254 作者:  Chen L (Chen L.);  Yan S (Yan S.);  Xu PF (Xu P. F.);  Lu J (Lu J.);  Deng JJ (Deng J. J.)   |  收藏  |  浏览/下载：90/4  |  提交时间：2010/09/07 Magnetic semiconductor  Magnetic Semiconductor  Magnetic Anisotropy  Magneto-transport Phenomenon  Molecular-beam Epitaxy  Magnetic anisotropy  Magneto-transport phenomenon  Molecular-beam epitaxy   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文  OAI收割 nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708 作者:  Li JB 收藏  |  浏览/下载：164/21  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  SILICON-CARBIDE NANOTUBES  FORMATION ENERGIES  CARBON NANOTUBES  BORON-NITRIDE  NANOWIRES  COMPOSITES  DEFECTS  FUSION   Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏  |  浏览/下载：93/14  |  提交时间：2010/03/08 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength   Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474 Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP 收藏  |  浏览/下载：55/6  |  提交时间：2010/03/08 resonant tunnelling diode  molecular beam epitaxy   Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文  OAI收割 chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647 作者:  Zhang Y;  Zhang Y 收藏  |  浏览/下载：268/32  |  提交时间：2010/03/08 resonant tunnelling diode  molecular beam epitaxy   Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283 作者:  Ji L;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：60/5  |  提交时间：2010/03/08