机构

• 半导体研究所 [87]

采集方式

• OAI收割 [87]

内容类型

• 会议论文 [87]

发表日期

• 2010 [4]
• 2009 [1]
• 2008 [6]
• 2007 [2]
• 2006 [10]
• 2005 [4]
• 更多

学科主题

• 光电子学 [29]
• 半导体物理 [27]
• 半导体材料 [26]
• 半导体器件 [3]
• 半导体化学 [2]

筛选

浏览/检索结果: 共87条，第1-10条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Desorption and Ripening of Low Density InAs Quantum Dots 会议论文  OAI收割 6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007 Zhan, F; Huang, SS; Niu, ZC; Ni, HQ; Xiong, YH; Fang, ZD; Zhou, HY; Luo, Y 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09 Quantum Dots   Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文  OAI收割 6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007 Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 InAs Quantum Dots   Mode Coupling and Directional Emission in Mirocylinder Lasers 会议论文  OAI收割 22nd ieee international semiconductor laser conference, kyoto, japan, sep 26-30, 2010 Huang YZ (Huang Yong-Zhen); Wang SJ (Wang Shi-Jiang); Yang YD (Yang Yue-De); Lin JD (Lin Jian-Dong); Che KJ (Che Kai-Jun); Xiao JL (Xiao Jin-Long); Du Y (Du Yun) 收藏  |  浏览/下载：76/8  |  提交时间：2011/07/15 Directional Emission InGaAsP/InP Mirocylinder Lasers 会议论文  OAI收割 2010 ieee photonics society winter topicals meeting, majorca, spain, 2010-01 Wang SJ (Wang Shi-Jiang); Huang YZ (Huang Yong-Zhen); Yang YD (Yang Yue-De); Lin JD (Lin Jian-Dong); Du Y (Du Yun) 收藏  |  浏览/下载：22/0  |  提交时间：2010/12/05 Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文  OAI收割 Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 EMISSION   Characteristics of triangle and square InP/InGaAsP microlasers 会议论文  OAI收割 10th international conference on transparent optical networks, athens, greece, jun 22-26, 2008 作者:  Yu LJ 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/09 semiconductor lasers   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 zinc oxide  defect  vacancy   The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 HVPE  GaN  nitridation  polarity  etching