中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
  • 半导体研究所 [12]
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内容类型
发表日期
  • 2012 [12]
学科主题
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浏览/检索结果: 共12条,第1-10条 帮助

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Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文  OAI收割
science china-physics mechanics & astronomy, 2012, 卷号: 55, 期号: 4, 页码: 619-624
Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载:14/0  |  提交时间:2013/03/17
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文  OAI收割
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/02
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
收藏  |  浏览/下载:12/0  |  提交时间:2013/03/27
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文  OAI收割
journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H
收藏  |  浏览/下载:17/0  |  提交时间:2013/02/27
Femtosecond laser lithography technique for submicron T-gate fabrication on positive photoresist 期刊论文  OAI收割
optical engineering, 2012, 卷号: 51, 期号: 5, 页码: 54303
Du, YD; Han, WH; Yan, W; Xu, XN; Zhang, YB; Wang, XD; Yang, FH; Cao, HZ; Jin, F; Dong, XZ; Zhao, ZS; Duan, XM; Liu, Y
收藏  |  浏览/下载:11/0  |  提交时间:2013/03/17
Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN 期刊论文  OAI收割
chinese physics letters, 2012, 卷号: 29, 期号: 1, 页码: 17301
Zeng, C; Zhang, SM; Wang, H; Liu, JP; Wang, HB; Li, ZC; Feng, MX; Zhao, DG; Liu, ZS; Jiang, DS; Yang, H
收藏  |  浏览/下载:10/0  |  提交时间:2013/03/17
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载:7/0  |  提交时间:2013/04/02
Multimode interference coupler based photonic analog-to-digital conversion scheme 期刊论文  OAI收割
optics letters, 2012, 卷号: 37, 期号: 17, 页码: 3699-3701
Wei SL (Wei Shile); Wu J (Wu Jian); Zhao LJ (Zhao Lingjuan); Yao C (Yao Chen); Ji C (Ji Chen); Lu D (Lu Dan); Zhang XL (Zhang Xilin); Yin ZS (Yin Zuoshan)
收藏  |  浏览/下载:25/0  |  提交时间:2013/04/02
Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 112, 112, 期号: 11, 页码: 113105, 113105
作者:  
Chen P (Chen, P.);  Feng MX (Feng, M. X.);  Jiang DS (Jiang, D. S.);  Zhao DG (Zhao, D. G.);  Liu ZS (Liu, Z. S.)
  |  收藏  |  浏览/下载:9/0  |  提交时间:2013/03/26
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 25, 页码: 252110, 252110
作者:  
Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
  |  收藏  |  浏览/下载:17/0  |  提交时间:2013/03/20