机构

• 新疆理化技术研究所 [13]
• 近代物理研究所 [2]

采集方式

• OAI收割 [15]

内容类型

• 期刊论文 [14]
• 会议论文 [1]

发表日期

• 2021 [2]
• 2020 [1]
• 2019 [3]
• 2018 [5]
• 2013 [2]
• 2011 [2]
• 更多

学科主题

• Chemistry [1]
• Materials ... [1]
• Metallurgy... [1]
• Nuclear Sc... [1]
• Physics [1]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1   |  收藏  |  浏览/下载：38/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：38/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)   Optically stimulated luminescence of Dy3+-doped NaCaPO4 glass-ceramics 期刊论文  OAI收割 JOURNAL OF RARE EARTHS, 2020, 卷号: 38, 期号: 9, 页码: 927-932 作者:  Xu, J (Xu, Jie)[ 1,2 ];  Chen, ZY (Chen, Zhaoyang)[ 1 ];  Gai, MQ (Gai, Minqiang)[ 1 ];  Fan, YW (Fan, Yanwei)[ 1 ];  He, CF (He, Chengfa)[ 3 ]   |  收藏  |  浏览/下载：51/0  |  提交时间：2020/09/09 Optically stimulated luminescence  Glass-ceramics  Radiation measurements  Photoluminescence  Rare earths   Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：88/0  |  提交时间：2019/11/10 Single-event multiple-cell upsets (MCUs)  static random access memory  total ionizing dose (TID)   Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 期刊论文  OAI收割 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178 作者:  Yao, S (Yao, Shuai)[ 1,2,3 ];  Lu, W (Lu, Wu)[ 1,2,4 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Li, XL (Li, Xiaolong)[ 1,2,3 ]   |  收藏  |  浏览/下载：99/0  |  提交时间：2019/02/25 Enhanced low dose rate sensitivity  single event transient  bipolar voltage comparator  synergistic effect   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：115/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文  OAI收割 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：49/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)   Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 422, 期号: 5, 页码: 2018-12-17 作者:  Kong, XR (Kong, Xirui);  Fu, ZL (Fu, Zhilong);  Que, HY (Que, Huiying);  Fan, YW (Fan, Yanwei);  Chen, ZY (Chen, Zhaoyang)   |  收藏  |  浏览/下载：50/0  |  提交时间：2018/07/20 Limgpo4  Ceramic Disc  Tb  Osl  b  Recording Time  Bleaching Time  Total-ionizing Dose Effects   Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834 作者:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin)   |  收藏  |  浏览/下载：29/0  |  提交时间：2018/07/24 Bipolar Technology  Co-60 Gamma Irradiation  Enhanced Low-dose Rate Sensitivity (Eldrs)  Temperature-switching Approach (Tsa)   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)   |  收藏  |  浏览/下载：53/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)