机构

• 半导体研究所 [4]
• 西安光学精密机械研究... [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2022 [1]
• 2012 [3]
• 2011 [1]
• 2009 [1]

学科主题

• 半导体物理 [4]
• 物理科学和化学 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 First result from the Jinping Underground Nuclear Astrophysics experiment JUNA: precise measurement of the 92 keV Mg-25(p, y)Al-26 resonance 期刊论文  OAI收割 SCIENCE BULLETIN, 2022, 卷号: 67, 期号: 2, 页码: 125-132 作者:  Su, Jun;  Zhang, Hao;  Li, Zhihong;  Ventura, Paolo;  Li, Yunju   |  收藏  |  浏览/下载：60/0  |  提交时间：2022/04/11 Nuclear astrophysics  Underground laboratory  Cosmic y ray  Resonance reaction   Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文  OAI收割 semiconductor science and technology, Semiconductor Science and Technology, 2012, 2012, 卷号: 27, 27, 期号: 11, 页码: 115010, 115010 作者:  Wang, Lijuan   |  收藏  |  浏览/下载：22/0  |  提交时间：2013/04/19 Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文  OAI收割 materials, MATERIALS, 2012, 2012, 卷号: 5, 5, 期号: 12, 页码: 2917-2926, 2917-2926 作者:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan)   |  收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26 Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文  OAI收割 semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 2012, 卷号: 27, 27, 期号: 11, 页码: 115010, 115010 作者:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)   |  收藏  |  浏览/下载：30/0  |  提交时间：2013/03/26 Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   一种新型高分子聚合物TPA20的荧光量子效率 期刊论文  OAI收割 电子科技, 2009, 卷号: 22, 期号: 5, 页码: 72-74 Liu Huijie(刘卉洁); Liu Jifang(刘继芳); He Junfang(贺俊芳) 收藏  |  浏览/下载：41/0  |  提交时间：2011/09/30