中国科学院机构知识库网格系统: 检索

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	First result from the Jinping Underground Nuclear Astrophysics experiment JUNA: precise measurement of the 92 keV Mg-25(p, y)Al-26 resonance 期刊论文 OAI收割 SCIENCE BULLETIN, 2022, 卷号: 67, 期号: 2, 页码: 125-132 作者: Su, Jun; Zhang, Hao; Li, Zhihong; Ventura, Paolo; Li, Yunju \| 收藏 \| 浏览/下载：72/0 \| 提交时间：2022/04/11 Nuclear astrophysics Underground laboratory Cosmic y ray Resonance reaction
	Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文 OAI收割 semiconductor science and technology, Semiconductor Science and Technology, 2012, 2012, 卷号: 27, 27, 期号: 11, 页码: 115010, 115010 作者: Wang, Lijuan; He, Jifang; Shang, Xiangjun; Li, Mifeng; Yu, Ying \| 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/04/19
	Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文 OAI收割 materials, MATERIALS, 2012, 2012, 卷号: 5, 5, 期号: 12, 页码: 2917-2926, 2917-2926 作者: Shi YB (Shi, Yunbo); Guo H (Guo, Hao); Ni HQ (Ni, Haiqiao); Xue CY (Xue, Chenyang); Niu ZC (Niu, Zhichuan) \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/26
	Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文 OAI收割 semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 2012, 卷号: 27, 27, 期号: 11, 页码: 115010, 115010 作者: Wang LJ (Wang, Lijuan); He JF (He, Jifang); Shang XJ (Shang, Xiangjun); Li MF (Li, Mifeng); Yu Y (Yu, Ying) \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2013/03/26
	Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文 OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者: He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying \| 收藏 \| 浏览/下载：81/0 \| 提交时间：2012/06/14 Atomic force microscopy Buffer layers Epitaxial growth Gallium alloys Gallium arsenide Germanium Growth temperature High resolution transmission electron microscopy Molecular beam epitaxy Molecular beams Semiconducting gallium Semiconductor device structures Semiconductor quantum wells Atomic Force Microscopy Buffer Layers Epitaxial Growth Gallium Alloys Gallium Arsenide Germanium Growth Temperature High Resolution Transmission Electron Microscopy Molecular Beam Epitaxy Molecular Beams Semiconducting Gallium Semiconductor Device Structures Semiconductor Quantum Wells
	一种新型高分子聚合物TPA20的荧光量子效率期刊论文 OAI收割电子科技, 2009, 卷号: 22, 期号: 5, 页码: 72-74 Liu Huijie(刘卉洁); Liu Jifang(刘继芳); He Junfang(贺俊芳) 收藏 \| 浏览/下载：48/0 \| 提交时间：2011/09/30