机构

• 半导体研究所 [7]
• 高能物理研究所 [1]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [7]
• 会议论文 [1]

发表日期

• 2013 [4]
• 2012 [3]
• 2010 [1]

学科主题

• 半导体材料 [7]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文  OAI收割 journal of semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004 Jing, Liang; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Li, Zhidong; Ding, Jieqin; Wang, Zhanguo; Hou, Xun 收藏  |  浏览/下载：19/0  |  提交时间：2014/04/28 Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文  OAI收割 physica b-condensed matter, 2013, 卷号: 414, 页码: 110-114 Li, Zhidong; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin 收藏  |  浏览/下载：24/0  |  提交时间：2013/09/17 The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文  OAI收割 journal of semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 113002 Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng; Zhidong, Li; Jieqin, Ding; Zhanguo, Wang; Xun, Hou 收藏  |  浏览/下载：17/0  |  提交时间：2014/04/30 Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文  OAI收割 physica b: condensed matter, Physica B: Condensed Matter, 2013, 2013, 卷号: 414, 414, 页码: 110-114, 110-114 作者:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen   |  收藏  |  浏览/下载：20/0  |  提交时间：2014/04/28 Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文  OAI收割 physica b-condensed matter, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924 Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Yin HB (Yin, Haibo); Chen H (Chen, Hong); Feng C (Feng, Chun); Jiang LJ (Jiang, Lijuan) 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/27 A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102 Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun) 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/26 A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102 Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/19 BEAM POLARIZATION THEORY AND ITS APPLICATION TO HLS STORAGE RING 会议论文  OAI收割 Proceedings of the first International Particle Accelerator Conference （IPAC 2010）, Japan, 2010 作者:  Jieqin;  Lan;  Hongliang;  Xu;  Yucong 收藏  |  浏览/下载：20/0  |  提交时间：2016/06/15