中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共8条，第1-8条

帮助

条数/页：排序方式：
	The sequence and de novo assembly of the giant panda genome 期刊论文 OAI收割 Nature, 2010, 卷号: 463, 期号: 7279, 页码: 311-317 Li RQ; Fan W; Tian G; Zhu HM; He L; Cai J; Huang QF; Cai QL; Li B; Bai YQ; Zhang ZH; Zhang YP; Wang W; Li J; Wei FW; Li H; Jian M; Li JW; Zhang ZL; Nielsen R; Li DW; Gu WJ; Yang ZT; Xuan ZL; Ryder OA; Leung FCC; Zhou Y; Cao JJ; Sun X; Fu YG; Fang XD; Guo XS; Wang B; Hou R; Shen FJ; Mu B; Ni PX; Lin RM; Qian WB; Wang GD; Yu C; Nie WH; Wang JH; Wu ZG; Liang HQ; Min JM; Wu Q; Cheng SF; Ruan J; Wang MW; Shi ZB; Wen M; Liu BH; Ren XL; Zheng HS; Dong D; Cook K; Shan G; Zhang H; Kosiol C; Xie XY; Lu ZH; Zheng HC; Li YR; Steiner CC; Lam TTY; Lin SY; Zhang QH; Li GQ; Tian J; Gong TM; Liu HD; Zhang DJ; Fang L; Ye C; Zhang JB; Hu WB; Xu AL; Ren YY; Zhang GJ; Bruford MW; Li QB; Ma LJ; Guo YR; An N; Hu YJ; Zheng Y; Shi YY; Li ZQ; Liu Q; Chen YL; Zhao J; Qu N; Zhao SC; Tian F; Wang XL; Wang HY; Xu LZ; Liu X; Vinar T; Wang YJ; Lam TW; Yiu SM; Liu SP; Zhang HM; Li DS; Huang Y; Wang X; Yang GH; Jiang Z; Wang JY; Qin N; Li L; Li JX; Bolund L; Kristiansen K; Wong GKS; Olson M; Zhang XQ; Li SG; Yang HM; Wang J; Wang J \| 收藏 \| 浏览/下载：222/0 \| 提交时间：2015/07/09
	Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文 iSwitch采集 Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 作者: Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK 收藏 \| 浏览/下载：29/0 \| 提交时间：2019/05/12 Gan Low-frequency noise Deep levels Deep level transient fourier spectroscopy
	Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏 \| 浏览/下载：27/0 \| 提交时间：2010/10/29 GaN low-frequency noise deep levels deep level transient Fourier spectroscopy DEVICES
	Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文 OAI收割 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK 收藏 \| 浏览/下载：354/96 \| 提交时间：2010/03/09 GaN
	Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 iSwitch采集 Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 作者: Leung, BH; Chan, NH; Fong, WK; Zhu, CF; Ng, SW 收藏 \| 浏览/下载：26/0 \| 提交时间：2019/05/12 Deep level transient fourier spectroscopy (dltfs) Gallium nitride (gan) Intermediate-temperature buffer layer (itbf) Low-frequency noise
	Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 OAI收割 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏 \| 浏览/下载：139/0 \| 提交时间：2010/08/12 deep level transient Fourier spectroscopy (DLTFS) gallium nitride (GaN) intermediate-temperature buffer layer (ITBF) low-frequency noise RESONANT-TUNNELING DIODES GENERATION-RECOMBINATION NOISE RANDOM-TELEGRAPH NOISE ULTRAVIOLET PHOTODETECTORS DEVICES
	Study of gan thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy 期刊论文 iSwitch采集 Journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104 作者: Lu, LW; Fong, WK; Zhu, CF; Leung, BH; Surya, C 收藏 \| 浏览/下载：31/0 \| 提交时间：2019/05/12 Characterization Molecular beam epitaxy Semiconducting materials
	Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 99-104 Lu LW; Fong WK; Zhu CF; Leung BH; Surya C; Wang J; Ge WK 收藏 \| 浏览/下载：104/14 \| 提交时间：2010/08/12 characterization molecular beam epitaxy semiconducting materials STRAIN