中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共12条,第1-10条 帮助

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Metal-Free and Metallated Polymers: Properties and Photovoltaic Performance 期刊论文  OAI收割
macromolecular chemistry and physics, 2012, 卷号: 213, 期号: 13, 页码: 1300-1310
Ng A; Ho CL; Fung MK; Sun YC; Shao SY; Fu YY; Ng AMC; Li CH; Cheung WK; Leung YH; Djurisic AB; Wang QW; He Z; Wang XZ; Chan WK; Xie ZY; Zapien JA; To CH; Wong WY
收藏  |  浏览/下载:19/0  |  提交时间:2013/05/20
p53-independent pRB degradation contributes to a drug-induced apoptosis in AGS cells 期刊论文  OAI收割
CELL RESEARCH, 2005, 卷号: 15, 期号: 9, 页码: 695-703
作者:  
Jin, Y;  Leung, WK;  Sung, JJY;  Wu, JR
收藏  |  浏览/下载:32/0  |  提交时间:2015/07/22
A study of the EB-type eclipsing binary GR Tauri with mass transfer 期刊论文  OAI收割
ASTRONOMY & ASTROPHYSICS, 2004, 卷号: 423, 期号: 2, 页码: 607-611
作者:  
Gu SH(顾盛宏);  Chen PS(陈培生);  Choy, YK;  Leung, KC;  Chung, WK
收藏  |  浏览/下载:17/0  |  提交时间:2016/04/07
Effect of peroxisome proliferator activated receptor gamma ligands on growth and gene expression profiles of gastric cancer cells 期刊论文  OAI收割
GUT, 2004, 卷号: 53, 期号: 3, 页码: 331-338
作者:  
Leung, WK;  Bai, AHC;  Chan, VYW;  Yu, J;  Chan, MWY
收藏  |  浏览/下载:34/0  |  提交时间:2015/07/22
Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文  iSwitch采集
Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
作者:  
Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK
收藏  |  浏览/下载:28/0  |  提交时间:2019/05/12
Effects of acidic and basic hydrolysis catalysts on the photocatalytic activity and microstructures of bimodal mesoporous titania 期刊论文  OAI收割
JOURNAL OF CATALYSIS, 2003, 卷号: 217, 期号: 1, 页码: 69-78
作者:  
Yu, JG;  Yu, JC;  Leung, MKP;  Ho, WK;  Cheng, B
  |  收藏  |  浏览/下载:20/0  |  提交时间:2019/04/09
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:27/0  |  提交时间:2010/10/29
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文  OAI收割
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK
收藏  |  浏览/下载:353/96  |  提交时间:2010/03/09
GaN  
Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  iSwitch采集
Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
作者:  
Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW
收藏  |  浏览/下载:25/0  |  提交时间:2019/05/12
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  OAI收割
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:138/0  |  提交时间:2010/08/12