中国科学院机构知识库网格系统: 检索

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	Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI 期刊论文 OAI收割 IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 6, 页码: 758-760 Yu, W; Zhang, B; Zhao, QT; Buca, D; Hartmann, JM; Luptak, R; Mussler, G; Fox, A; Bourdelle, KK; Wang, X; Mantl, S 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/04/17 Hole mobility quantum well (QW) SiGe strained Si (sSi)
	Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source 期刊论文 OAI收割 SOLID-STATE ELECTRONICS, 2012, 卷号: 74, 页码: 97-101 Zhao, QT; Yu, WJ; Zhang, B; Schmidt, M; Richter, S; Buca, D; Hartmann, JM; Luptak, R; Fox, A; Bourdelle, KK; Mantl, S 收藏 \| 浏览/下载：15/0 \| 提交时间：2013/04/17 Tunnel FET Strained Si Subthreshold swing SiGe
	High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate 期刊论文 OAI收割 SOLID-STATE ELECTRONICS, 2011, 卷号: 62, 期号: 1, 页码: 185-188 Yu,W; Zhang,B; Zhao,QT; Hartmann,JM; Buca,D; Nichau,A; Luptak,R; Lopes,JMJ; Lenk,S; Luysberg,M; Bourdelle,KK; Wang,X; Mantl,S 收藏 \| 浏览/下载：14/0 \| 提交时间：2012/04/10 PERGAMON-ELSEVIER SCIENCE LTD
	Tunneling field-effect transistor with a strained Si channel and a Si 0.5Ge0.5 source 期刊论文 OAI收割 European Solid-State Device Research Conference.ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference, 2011, 期号: 0, 页码: 251-254 Zhao, QT; Yu, WJ; Zhang, B; Schmidt, M.; Richter, S.; Buca, D.; Hartmann, J.-M.; Luptak, R.; Fox, A.; Bourdelle, K.K.; Mantl, S. 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/08/28
	High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate 期刊论文 OAI收割 SOLID-STATE ELECTRONICS, 2011, 卷号: 62, 期号: 1, 页码: 185-188 Yu, W; Zhang, B; Zhao, QT; Hartmann, JM; Buca, D; Nichau, A; Luptak, R; Lopes, JMJ; Lenk, S; Luysberg, M; Bourdelle, KK; Wang, X; Mantl, S 收藏 \| 浏览/下载：9/0 \| 提交时间：2013/05/10 Engineering Physics Physics Electrical & Electronic Applied Condensed Matter