中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共10条,第1-10条 帮助

条数/页: 排序方式:
Microscopic slickenside as a record of weak shock metamorphism in the surface layer of asteroid Ryugu 期刊论文  OAI收割
METEORITICS & PLANETARY SCIENCE, 2024, 页码: 12
作者:  
Miyahara, Masaaki;  Noguchi, Takaaki;  Matsumoto, Toru;  Tomioka, Naotaka;  Miyake, Akira
  |  收藏  |  浏览/下载:10/0  |  提交时间:2025/04/01
Influx of nitrogen-rich material from the outer Solar System indicated by iron nitride in Ryugu samples 期刊论文  OAI收割
NATURE ASTRONOMY, 2024, 卷号: 8, 期号: 2, 页码: 18
作者:  
Matsumoto, Toru;  Noguchi, Takaaki;  Miyake, Akira;  Igami, Yohei;  Haruta, Mitsutaka
  |  收藏  |  浏览/下载:9/0  |  提交时间:2024/09/13
Nonequilibrium spherulitic magnetite in the Ryugu samples 期刊论文  OAI收割
GEOCHIMICA ET COSMOCHIMICA ACTA, 2023, 卷号: 346, 页码: 65-75
作者:  
Dobrica, Elena;  Ishii, Hope A.;  Bradley, John P.;  Ohtaki, Kenta;  Brearley, Adrian J.
  |  收藏  |  浏览/下载:20/0  |  提交时间:2024/09/26
Guidelines for the use and interpretation of assays for monitoring autophagy (4th edition) 期刊论文  OAI收割
AUTOPHAGY, 2021, 卷号: 17
作者:  
Klionsky, Daniel J.;  Abdel-Aziz, Amal Kamal;  Abdelfatah, Sara;  Abdellatif, Mahmoud;  Abdoli, Asghar
  |  收藏  |  浏览/下载:319/0  |  提交时间:2021/05/31
UPDATE OF MAIN MAGNET POWER SUPPLIES AT PF-AR 会议论文  OAI收割
Proceedings of the first International Particle Accelerator Conference (IPAC 2010), Japan, 2010
作者:  
Ozaki;  Toshiyuki;  Akiyama;  Atsuyoshi;  Harada
收藏  |  浏览/下载:15/0  |  提交时间:2016/06/17
Effects of mercury vapor exposure on neuromotor function in Chinese miners and smelters 期刊论文  OAI收割
Int Arch Occup Environ Health., 2007, 卷号: 80, 页码: 381-387
作者:  
Toyoto Iwata;  Mineshi Sakamoto;  Xinbin Feng;  Minoru Yoshida;  Xiao-Jie Liu
  |  收藏  |  浏览/下载:9/0  |  提交时间:2021/04/16
Semiconductor light emitting device and method for producing the same 专利  OAI收割
专利号: US6773948, 申请日期: 2004-08-10, 公开日期: 2004-08-10
作者:  
NAKAMURA, SHINJI;  ISHIDA, MASAHIRO;  YURI, MASAAKI;  IMAFUJI, OSAMU;  ORITA, KENJI
  |  收藏  |  浏览/下载:20/0  |  提交时间:2020/01/18
Semiconductor device and semiconductor substrate, and method for fabricating the same 专利  OAI收割
专利号: US20020137249A1, 申请日期: 2002-09-26, 公开日期: 2002-09-26
作者:  
ISHIDA, MASAHIRO;  NAKAMURA, SHINJI;  ORITA, KENJI;  IMAFUJI, OSAMU;  YURI, MASAAKI
  |  收藏  |  浏览/下载:15/0  |  提交时间:2019/12/30
Method for fabricating semiconductor device having group III nitride 专利  OAI收割
专利号: US6117700, 申请日期: 2000-09-12, 公开日期: 2000-09-12
作者:  
ORITA, KENJI;  ISHIDA, MASAHIRO;  NAKAMURA, SHINJI;  YURI, MASAAKI
  |  收藏  |  浏览/下载:23/0  |  提交时间:2019/12/24
DEVELOPMENT OF A THREE-STAGED LOW EMISSIONS COMBUSTOR FOR INDUSTRIAL SMALL-SIZE GAS TURBINES 会议论文  OAI收割
ASME, Indianapolis,Indiana, 1999-06-07
Hiroshi Sato; Toshiji Amano; Yoshihiro Iiyama; Masaaki Mori; Tsuneaki Nakamura
收藏  |  浏览/下载:12/0  |  提交时间:2012/07/12