机构

• 近代物理研究所 [3]
• 上海微系统与信息技术... [2]
• 新疆理化技术研究所 [1]
• 中国科学院大学 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]

发表日期

• 2022 [1]
• 2021 [2]
• 2019 [1]
• 2016 [1]
• 2011 [2]

学科主题

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs 期刊论文  OAI收割 SCIENCE CHINA-INFORMATION SCIENCES, 2022, 卷号: 65, 期号: 2, 页码: 2 作者:  Cai, Chang;  Ning, Bingxu;  Fan, Xue;  Liu, Tianqi;  Ke, Lingyun   |  收藏  |  浏览/下载：49/0  |  提交时间：2021/12/09 Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 7 作者:  Yu, Jian;  Cai, Chang;  Ning, Bingxu;  Gao, Shuai;  Liu, Tianqi   |  收藏  |  浏览/下载：47/0  |  提交时间：2022/01/24 Heavy ions  Irradiation  Hardened  Single event upset   Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2021, 卷号: 1012, 页码: 11 作者:  Wang, Shu;  Cai, Chang;  Ning, Bingxu;  He, Ze;  Huang, Zhiqin   |  收藏  |  浏览/下载：43/0  |  提交时间：2021/12/08 SerDes  SRAM-based FPGA  Single Event Upset  Single Event Functional Interrupt   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：115/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer 期刊论文  iSwitch采集 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737 作者:  Dai, Lihua;  Bi, Dawei;  Ning, Bingxu;  Hu, Zhiyuan;  Song, Lei 收藏  |  浏览/下载：61/0  |  提交时间：2019/05/09 Buried oxide  Interface trap  Silicon ion implantation  Soi nmosfets  Total dose radiation   Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET 期刊论文  OAI收割 Journal of Semiconductors., 2011, 卷号: 32, 期号: 6 Liu, ZL; Hu, ZY; Zhang, ZX; Shao, Hua; Chen, M; Bi, Dawei; Ning, Bingxu; Zou, SC 收藏  |  浏览/下载：29/0  |  提交时间：2012/08/28 Influence of poly region extended into field oxide on total ionizing dose effect for deep submicron MOSFET 期刊论文  OAI收割 Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS.RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings, 2011, 期号: 0, 页码: 28-35 Liu, ZL; Hu, ZY; Zhang, ZX; Shao, H; Ning, Bingxu; Chen, M; Bi, Dawei; Zou, SC 收藏  |  浏览/下载：27/0  |  提交时间：2012/08/28